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NP0640SCT3G

Onsemi

NP0640SCT3G by Onsemi

NP0640SCT3G by Onsemi is a single silicon surge protector with a max DC off-state voltage of 58V and trigger device type as thyristor. It operates b/w -40 °C to 150°C, has a max breakdown voltage of 77V, and is ideal for UL recognized applications requiring protection against surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,022 parts In-Stock

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Digiode

USA . 268 parts In-Stock

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268

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Distributors (Availability)

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AZTECH Wire

Italy . 618 parts In-Stock

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$14.620

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618

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Kepictronics

USA . 120,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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RC Electronics

USA . 5,600 parts In-Stock

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$0.050

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$0.040

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$0.040

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$0.040

SupplyDigital Components

Austria . 5,128 parts In-Stock

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5,128

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Problanco Electronics

Mexico . 3,653 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Corphita

USA . 1,694 parts In-Stock

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UHIMA Technologies

Türkiye . 955 parts In-Stock

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Kulean Microsystems

USA . 221 parts In-Stock

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TANS Electronics

Latvia . 186 parts In-Stock

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Corohmni

South Africa . 105 parts In-Stock

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Overview

Experience the ultimate protection with the Onsemi NP0640SCT3G Silicon Surge Protector. As a leading manufacturer in the industry, Onsemi delivers top-quality products that guarantee reliability and durability. Ideal for a wide range of applications, this surge protector offers unmatched value and peace of mind by safeguarding your electronic devices from power surges and voltage spikes. Trust Onsemi to provide superior protection for your valuable equipment with the NP0640SCT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection for the internal components of the surge protector.

Configuration: SINGLE

The single configuration simplifies the installation process and reduces the need for additional components.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards or other surfaces.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to place and secure the surge protector in various locations.

Terminal Form: C BEND

The C bend terminal form provides a secure connection and easy installation process.

No. of Terminals: 2

The two terminals offer a simple and efficient connection setup for the surge protector.

Maximum DC Off-state Voltage: 58 V

The high maximum DC off-state voltage rating ensures protection against voltage spikes and surges up to 58 volts.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this surge protector can withstand high temperatures in various environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector ensures fast and reliable response to transient voltage surges, providing effective protection for connected devices.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40 °C allows the surge protector to function effectively in cold environments.

Terminal Finish: TIN

The tin terminal finish provides a reliable and durable connection for the surge protector.

Terminal Position: DUAL

The dual terminal position allows for flexibility in installation and connection options.

Maximum Holding Current: 150 mA

With a maximum holding current of 150 mA, this surge protector can effectively handle and dissipate transient surges without damage to connected equipment.

Maximum Breakdown Voltage: 77 V

The high maximum breakdown voltage rating of 77 volts ensures reliable protection against voltage surges and spikes.

Peak Reflow Temperature °C: 260

The surge protector can withstand peak reflow temperatures of up to 260 °C during the manufacturing process.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that this surge protector meets industry standards for safety and performance.

Technical Specifications

Silicon Surge Protectors NP0640SCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

77 V

Configuration:

Maximum DC Off-state Voltage:

58 V

Maximum Holding Current:

150 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Trigger Device Type:

Trade Compliance

NP0640SCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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