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NLHV4051DR2G

Onsemi

NLHV4051DR2G by Onsemi

NLHV4051DR2G by Onsemi is a CMOS single-ended multiplexer with 8 channels. It operates b/w -55 to 125 °C and has a max supply voltage of 18 V. With a nominal off-state isolation of 50 dB, it's ideal for military-grade applications requiring precise signal routing in compact spaces.

Median Price

$0.234

Lifecycle Status

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11

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1k+

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Arrow

USA . 145 parts In-Stock

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Rochester

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DigiKey

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Verical

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Mouser Electronics

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Chip1Stop

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Digiode

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Vyrian

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Flip Electronics

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Corphita

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Corohmni

South Africa . 349 parts In-Stock

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Vigor

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Continental Prestige Electronics

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Perfect Parts

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Problanco Electronics

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Lixinc

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Overview

Discover the cutting-edge NLHV4051DR2G multiplexer by Onsemi, crafted with precision and quality to meet your switching needs. Perfect for a wide range of applications, this versatile component offers seamless performance and reliability. With its advanced technology and military-grade temperature tolerance, the NLHV4051DR2G ensures optimal functionality in any environment. Trust Onsemi's reputation for excellence and elevate your projects with the unmatched value and benefits of this high-quality multiplexer. Choose the NLHV4051DR2G for superior performance and seamless operation every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the multiplexer, ensuring a longer lifespan.

Nominal Supply Voltage (Vsup) 5 V

Suitable for use in a wide range of applications that require a 5V power supply, making it versatile.

Maximum Operating Temperature 125 °C

Can operate reliably in high-temperature environments, making it suitable for industrial and military applications.

No. of Channels 8

Provides the ability to switch between multiple input and output channels, increasing flexibility and connectivity.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, making it energy-efficient and reliable.

Technical Specifications

Multiplexers & Switches NLHV4051DR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

50 dB

Nominal On-state Resistance Match:

25 ohm

Maximum On-state Resistance (Ron):

1050 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Maximum Switch-off Time:

90 ns

Maximum Switch-on Time:

90 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

NLHV4051DR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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