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NLHV4052DR2G

Onsemi

NLHV4052DR2G by Onsemi

NLHV4052DR2G by Onsemi is a CMOS differential multiplexer with 4 channels. It operates b/w -55 to 125 °C and has a supply voltage range of 3-18 V. With a max on-state resistance of 1050 ohm, it is ideal for military-grade applications requiring high isolation and low resistance switching.

Median Price

$0.244

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 312,500 parts In-Stock

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-

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$0.264

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$0.219

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$0.196

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$0.264

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$0.196

Farnell

UK . 312,500 parts In-Stock

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$0.182

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$0.182

Verical

USA . 312,500 parts In-Stock

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$0.244

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$0.244

Flip Electronics (Authorized)

USA . 56,911 parts In-Stock

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Digiode

USA . 1,999 parts In-Stock

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$0.206

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Flip Electronics

USA . 56,911 parts In-Stock

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DigiKey Marketplace

USA . 56,911 parts In-Stock

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$0.180

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Vyrian

USA . 8,980 parts In-Stock

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Corohmni

South Africa . 174 parts In-Stock

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$0.180

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$0.180

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Corphita

USA . 342 parts In-Stock

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$0.195

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AZTECH Wire

Italy . 319 parts In-Stock

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$17.110

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Continental Prestige Electronics

USA . 312,500 parts In-Stock

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$0.260

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TANS Electronics

Latvia . 7,736 parts In-Stock

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Problanco Electronics

Mexico . 6,747 parts In-Stock

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SupplyDigital Components

Austria . 5,185 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 4,232 parts In-Stock

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UHIMA Technologies

Türkiye . 436 parts In-Stock

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Overview

Discover the Onsemi NLHV4052DR2G, a top-quality multiplexer and switch that offers unparalleled performance and reliability. Designed by the reputable manufacturer Onsemi, this product is perfect for a wide range of applications. With its advanced features and innovative technology, the NLHV4052DR2G delivers exceptional value and benefits to customers. Whether you're looking for precision control or efficient signal routing, this versatile device is sure to exceed your expectations. Upgrade your project with the NLHV4052DR2G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components, ensuring durability and reliability.

Surface Mount: YES

Surface mount design allows for easy installation on PCBs, saving space and reducing assembly time.

No. of Functions: 2

Having 2 functions in one device increases versatility and functionality, allowing for more options in signal routing.

Nominal Supply Voltage (Vsup): 5 V

Compatible with standard 5V supply, making it easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without performance degradation, suitable for industrial and military applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the device energy efficient and reliable.

No. of Channels: 4

Having 4 channels allows for increased signal routing options and flexibility in switching multiple signals.

Technical Specifications

Multiplexers & Switches NLHV4052DR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

4

No. of Functions:

2

No. of Terminals:

16

Nominal Off-state Isolation:

50 dB

Nominal On-state Resistance Match:

25 ohm

Maximum On-state Resistance (Ron):

1050 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Maximum Switch-off Time:

75 ns

Maximum Switch-on Time:

75 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

NLHV4052DR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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