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NLAST4599DFT2

Onsemi

NLAST4599DFT2 by Onsemi

NLAST4599DFT2 by Onsemi is a SPDT multiplexer with 6 terminals, operating at -55 to 125 °C. It has a supply voltage range of 2-5.5 V and offers fast switching times of 25 ns on and 15 ns off. Ideal for military-grade applications requiring compact size and low power consumption.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 961 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.143

10k+ parts

$0.127

961

-

$0.172

$0.143

$0.127

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 131 parts In-Stock

1+ parts

$0.134

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131

$0.134

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Chip Stock

USA . 72,500 parts In-Stock

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72,500

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Vyrian

USA . 2,877 parts In-Stock

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2,877

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Sea View Technologies

USA . 2,782 parts In-Stock

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2,782

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Bristol Electronics

USA . 2,782 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,386 parts In-Stock

1+ parts

$0.127

100+ parts

-

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2,386

$0.127

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Vigor

Singapore . 678 parts In-Stock

1+ parts

$0.140

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678

$0.140

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Corohmni

South Africa . 431 parts In-Stock

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$0.141

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431

$0.141

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AZTECH Wire

Italy . 204 parts In-Stock

1+ parts

$12.770

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204

$12.770

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RC Electronics

USA . 54,000 parts In-Stock

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TANS Electronics

Latvia . 8,361 parts In-Stock

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8,361

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SupplyDigital Components

Austria . 7,854 parts In-Stock

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Problanco Electronics

Mexico . 4,202 parts In-Stock

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Continental Prestige Electronics

USA . 3,057 parts In-Stock

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$0.121

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3,057

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$0.121

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Kulean Microsystems

USA . 2,051 parts In-Stock

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2,051

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UHIMA Technologies

Türkiye . 661 parts In-Stock

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661

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Futuretech Components

Singapore . 548 parts In-Stock

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548

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Microchip USA

USA . 202 parts In-Stock

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202

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Overview

Upgrade your electronic devices with the NLAST4599DFT2 by Onsemi, a top-of-the-line multiplexer and switch that guarantees superior quality and reliability. Manufactured by industry leader Onsemi, this product offers unparalleled performance and precision in various applications. With its compact design and advanced technology, the NLAST4599DFT2 ensures seamless operation and optimal efficiency. Trust Onsemi to deliver cutting-edge solutions that elevate your projects to new heights. Experience the difference with the NLAST4599DFT2 and unlock a world of possibilities for your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and suitable for various environments, ensuring the reliability of the product.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and enabling automated assembly processes.

Nominal Supply Voltage (Vsup): 3 V

The nominal supply voltage of 3V is common and compatible with many systems, making this product versatile and easy to integrate.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand heat and harsh conditions, ensuring reliable performance in challenging environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable for various applications.

Temperature Grade: MILITARY

Designed for military-grade applications, this product meets stringent reliability and performance requirements, making it suitable for demanding environments.

Technical Specifications

Multiplexers & Switches NLAST4599DFT2 attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

0 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Nominal Off-state Isolation:

93 dB

Nominal On-state Resistance Match:

3 ohm

Maximum On-state Resistance (Ron):

55 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

2.5/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.002 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

15 ns

Maximum Switch-on Time:

25 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

1.25 mm

Trade Compliance

NLAST4599DFT2 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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