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NLAS7222AMUR2G

Onsemi

NLAS7222AMUR2G by Onsemi

NLAS7222AMUR2G by Onsemi is a CMOS DPDT switch with 10 terminals, operating at -40 to 85°C. It has a nominal voltage of 3.3V and max on-state resistance of 9 ohm. Ideal for industrial applications requiring separate outputs and break-before-make switching within a compact chip carrier package.

Median Price

$0.655

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 28 parts In-Stock

1+ parts

$1.980

100+ parts

$0.816

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-

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28

$1.980

$0.816

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Flip Electronics (Authorized)

USA . 14,503 parts In-Stock

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14,503

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Arrow

USA . 3,000 parts In-Stock

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$0.504

3,000

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$0.504

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

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$0.435

3,000

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$0.435

Rochester

USA . 724 parts In-Stock

1+ parts

-

100+ parts

$0.655

1k+ parts

$0.544

10k+ parts

$0.485

724

-

$0.655

$0.544

$0.485

Verical

USA . 551 parts In-Stock

1+ parts

-

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$0.680

10k+ parts

$0.606

551

-

-

$0.680

$0.606

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,617 parts In-Stock

1+ parts

$0.510

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1,617

$0.510

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Flip Electronics

USA . 11,503 parts In-Stock

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11,503

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Vyrian

USA . 4,826 parts In-Stock

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4,826

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Distributors (Availability)

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Vigor

Singapore . 148 parts In-Stock

1+ parts

$0.430

100+ parts

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148

$0.430

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Corohmni

South Africa . 430 parts In-Stock

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$0.435

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430

$0.435

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Corphita

USA . 1,878 parts In-Stock

1+ parts

$0.483

100+ parts

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1,878

$0.483

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Component Stockers USA

USA . 8,227 parts In-Stock

1+ parts

$0.550

100+ parts

$0.510

1k+ parts

$0.530

10k+ parts

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8,227

$0.550

$0.510

$0.530

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Microchip USA

USA . 4,133 parts In-Stock

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$3.731

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4,133

$3.731

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Perfect Parts

USA . 19,036 parts In-Stock

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Problanco Electronics

Mexico . 3,117 parts In-Stock

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GreenTree Electronics

Israel . 2,299 parts In-Stock

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2,299

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Authorized Procurement Solutions

USA . 2,299 parts In-Stock

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2,299

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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SupplyDigital Components

Austria . 1,805 parts In-Stock

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TANS Electronics

Latvia . 1,791 parts In-Stock

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UHIMA Technologies

Türkiye . 719 parts In-Stock

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719

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Kulean Microsystems

USA . 338 parts In-Stock

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338

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Overview

Maximize the efficiency of your electronic circuits with the NLAS7222AMUR2G by Onsemi. This high-quality DPDT switch offers seamless performance in a compact chip carrier package, making it ideal for a wide range of applications. With separate outputs and industrial-grade temperature tolerance, this versatile switch ensures reliable operation even in challenging conditions. Experience the benefits of advanced CMOS technology and precise switching capabilities with the NLAS7222AMUR2G, providing unmatched value and performance for your projects.

Feature Benefit Bullets

Surface Mount: YES

Ease of installation and space-saving design make this product suitable for compact electronic devices.

Nominal Supply Voltage (Vsup): 3.3 V

Compatible with common voltage standards, ensuring seamless integration into existing circuitry.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial applications.

No. of Channels: 2

Provides flexibility in routing signals and managing multiple inputs/outputs.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Switching (V): BREAK-BEFORE-MAKE

Ensures that the switch opens before closing, preventing short circuits and improving reliability.

Technical Specifications

Multiplexers & Switches NLAS7222AMUR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-XQCC-N10

JESD-609 Code:

e4

Length:

1.8 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Nominal Off-state Isolation:

28 dB

Nominal On-state Resistance Match:

.35 ohm

Maximum On-state Resistance (Ron):

9 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC10,.06X.07,16

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Maximum Switch-off Time:

25 ns

Maximum Switch-on Time:

30 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.4 mm

Trade Compliance

NLAS7222AMUR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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