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NLAS52231MUR2G

Onsemi

NLAS52231MUR2G by Onsemi

NLAS52231MUR2G by Onsemi is a SPDT switch with 10 terminals, operating from -40 to 85 °C. It has a low on-state resistance of 0.46 ohm and provides 62 dB isolation. Ideal for industrial applications requiring fast switching with separate outputs at supply voltages ranging from 1.65V to 4.5V.

Median Price

$0.606

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 104,449 parts In-Stock

1+ parts

-

100+ parts

$0.595

1k+ parts

$0.493

10k+ parts

$0.440

104,449

-

$0.595

$0.493

$0.440

Verical

USA . 97,811 parts In-Stock

1+ parts

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$0.617

10k+ parts

$0.550

97,811

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-

$0.617

$0.550

Distributors (In-Stock)

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Digiode

USA . 356 parts In-Stock

1+ parts

$0.463

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356

$0.463

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Netsource Technology, Inc.

USA . 10,141 parts In-Stock

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Vyrian

USA . 5,359 parts In-Stock

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5,359

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Ashlea Components Ltd

UK . 2,735 parts In-Stock

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Semtec, LLC

USA . 250 parts In-Stock

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250

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ECAB

Sweden . 243 parts In-Stock

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Elcom Components

USA . 17 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,568 parts In-Stock

1+ parts

$0.438

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$0.438

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Vigor

Singapore . 218 parts In-Stock

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$0.470

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$0.470

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Corohmni

South Africa . 213 parts In-Stock

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$0.487

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$0.487

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AZTECH Wire

Italy . 571 parts In-Stock

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$14.080

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Continental Prestige Electronics

USA . 104,449 parts In-Stock

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$0.417

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$0.417

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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Perfect Parts

USA . 9,420 parts In-Stock

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Problanco Electronics

Mexico . 8,272 parts In-Stock

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TANS Electronics

Latvia . 5,965 parts In-Stock

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SupplyDigital Components

Austria . 5,099 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Kulean Microsystems

USA . 4,007 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 879 parts In-Stock

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Microchip USA

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Overview

Experience seamless and reliable performance with the NLAS52231MUR2G by Onsemi, a top-quality multiplexer & switch designed to meet your electronic needs. Onsemi's reputation for excellence shines through in this product, offering customers unmatched value and benefits. With its compact design and versatile applications, this chip carrier with heat sink/slug package shape is perfect for industrial use. Trust Onsemi to deliver innovation and quality in every component, ensuring your project operates smoothly and efficiently. Upgrade your electronics with the NLAS52231MUR2G and experience the difference today.

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and reducing costs.

Nominal Supply Voltage (Vsup): 3 V

Optimal nominal supply voltage for efficient operation and compatibility with a variety of systems.

No. of Terminals: 10

Sufficient number of terminals for versatile connections and configurations.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature allows for use in both extreme cold and hot environments.

Output (V): SEPARATE OUTPUT

Separate output design prevents interference or crosstalk between different output signals.

Maximum Switch-on Time: 50 ns

Fast switch-on time ensures quick and efficient signal routing without delays.

Nominal Off-state Isolation: 62 dB

High off-state isolation ensures minimal signal leakage and cross-talk between channels.

Technical Specifications

Multiplexers & Switches NLAS52231MUR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-XQCC-N10

JESD-609 Code:

e4

Length:

1.8 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

10

Nominal Off-state Isolation:

62 dB

Nominal On-state Resistance Match:

.05 ohm

Maximum On-state Resistance (Ron):

.46 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC10,.06X.07,16

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/4.3

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

4.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

30 ns

Maximum Switch-on Time:

50 ns

Switching (V):

BREAK-BEFORE-MAKE

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.4 mm

Trade Compliance

NLAS52231MUR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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