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NLAS4717FCT1

Onsemi

NLAS4717FCT1 by Onsemi

NLAS4717FCT1 by Onsemi is a CMOS SPDT switch with 2 functions, 10 terminals, and 3V nominal voltage. It operates in industrial temperatures (-40 to 85 °C) and has a very thin profile (0.65mm). Ideal for applications requiring separate outputs and low on-state resistance (4.5 ohm).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,124 parts In-Stock

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Digiode

USA . 1,539 parts In-Stock

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AZTECH Wire

Italy . 448 parts In-Stock

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$21.890

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QUARKTWIN TECHNOLOGY LTD

USA . 22,867 parts In-Stock

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SupplyDigital Components

Austria . 7,043 parts In-Stock

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Problanco Electronics

Mexico . 6,266 parts In-Stock

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Microchip USA

USA . 5,188 parts In-Stock

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Kulean Microsystems

USA . 3,967 parts In-Stock

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TANS Electronics

Latvia . 3,881 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 1,339 parts In-Stock

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UHIMA Technologies

Türkiye . 348 parts In-Stock

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Vigor

Singapore . 345 parts In-Stock

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Corohmni

South Africa . 191 parts In-Stock

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Overview

Discover the NLAS4717FCT1 by Onsemi, a top-quality multiplexer and switch designed to meet your electronic needs. With a manufacturer like Onsemi behind it, you can trust in the reliability and innovation this product offers. Whether you're working on consumer electronics, automotive applications, or industrial systems, this versatile component provides seamless switching capabilities and excellent performance. Experience the value and benefits of the NLAS4717FCT1, where quality meets functionality for all your project requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the multiplexer, ensuring longevity and reliability.

No. of Functions: 2

Offers versatility and the ability to switch between two different channels or functions.

Nominal Supply Voltage (Vsup): 3 V

Compatible with a common supply voltage, making it easy to integrate into existing systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Multiplexers & Switches NLAS4717FCT1 attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PBGA-B10

JESD-609 Code:

e0

Length:

1.965 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NC

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

10

Nominal Off-state Isolation:

75 dB

Nominal On-state Resistance Match:

.1 ohm

Maximum On-state Resistance (Ron):

4.5 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA10,3X4,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

240

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

.65 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

40 ns

Maximum Switch-on Time:

30 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.465 mm

Trade Compliance

NLAS4717FCT1 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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