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NLAS44599DT

Onsemi

NLAS44599DT by Onsemi

NLAS44599DT by Onsemi is a CMOS DPDT switch with 2 functions, operating at -55 to 125 °C. It has a supply voltage range of 2-5.5 V and offers 93 dB isolation. Ideal for military-grade applications requiring fast switching times and low on-state resistance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,841 parts In-Stock

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Prism Electronics

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AZTECH Wire

Italy . 722 parts In-Stock

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Kulean Microsystems

USA . 7,400 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 5,608 parts In-Stock

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TANS Electronics

Latvia . 2,614 parts In-Stock

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Corphita

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Vigor

Singapore . 918 parts In-Stock

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UHIMA Technologies

Türkiye . 461 parts In-Stock

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Microchip USA

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Corohmni

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Overview

Experience seamless and efficient switching with the NLAS44599DT by Onsemi, a high-quality multiplexer that guarantees superior performance. Manufactured by industry leader Onsemi, this versatile product is designed for a wide range of applications. With its advanced technology and durable construction, the NLAS44599DT ensures reliable operation and precise control. Say goodbye to downtime and hello to optimized functionality with this innovative solution. Trust Onsemi to deliver excellence and trust the NLAS44599DT to exceed your expectations.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and reliability, making this product suitable for a variety of applications.

Surface Mount - YES

This product is surface mountable, allowing for easy installation and space-saving on a PCB.

No. of Functions - 2

Having two functions in one device adds versatility and efficiency to the circuit design.

Nominal Supply Voltage (Vsup) - 2.5 V

The nominal supply voltage of 2.5V ensures compatibility with a wide range of power sources.

Maximum Operating Temperature - 125 °C

With a high maximum operating temperature of 125 °C, this product can withstand demanding environmental conditions.

Technology - CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making this product efficient and reliable.

Technical Specifications

Multiplexers & Switches NLAS44599DT attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

16

Nominal Off-state Isolation:

93 dB

Maximum On-state Resistance (Ron):

105 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Maximum Switch-off Time:

18 ns

Maximum Switch-on Time:

41 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

4.4 mm

Trade Compliance

NLAS44599DT Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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