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NLAS4053DTG

Onsemi

NLAS4053DTG by Onsemi

NLAS4053DTG by Onsemi is a 3-channel CMOS multiplexer with 37 ohm Ron, 28 ns switch-on/off time. Operating from -55 to 125 °C, it has 0.05 A signal current and 93 dB isolation. Ideal for military-grade applications requiring fast switching and low on-state resistance.

Median Price

$0.273

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 228 parts In-Stock

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$0.273

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$0.257

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$0.232

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228

$0.273

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$0.232

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Distributors (In-Stock)

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Digiode

USA . 774 parts In-Stock

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$0.259

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Vyrian

USA . 4,599 parts In-Stock

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ComSIT Distribution GmbH

Germany . 83 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 346 parts In-Stock

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$0.246

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346

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Corohmni

South Africa . 67 parts In-Stock

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$0.273

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AZTECH Wire

Italy . 360 parts In-Stock

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$15.550

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Advanced Electronics

New Zealand . 73 parts In-Stock

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$17.672

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$16.082

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$14.491

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73

$17.672

$16.082

$14.491

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Component Stockers USA

USA . 255 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Microchip USA

USA . 6,969 parts In-Stock

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Kulean Microsystems

USA . 5,743 parts In-Stock

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TANS Electronics

Latvia . 4,857 parts In-Stock

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Perfect Parts

USA . 4,497 parts In-Stock

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SupplyDigital Components

Austria . 1,664 parts In-Stock

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Problanco Electronics

Mexico . 1,479 parts In-Stock

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UHIMA Technologies

Türkiye . 277 parts In-Stock

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Vigor

Singapore . 200 parts In-Stock

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Overview

Discover the power of seamless connectivity with the NLAS4053DTG by Onsemi. Crafted with precision and reliability, this multiplexer offers unparalleled performance for a wide range of applications. Whether you're designing cutting-edge electronics or upgrading existing systems, this versatile device provides superior functionality and efficiency. Experience the quality and innovation that Onsemi is known for, and unlock a world of possibilities with the NLAS4053DTG. Elevate your projects with this top-of-the-line component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the multiplexer, ensuring a long lifespan.

No. of Functions: 3

Having multiple functions allows for more versatile use of the multiplexer in different applications.

Nominal Supply Voltage (Vsup): 3 V

The 3V supply voltage is common and widely available, making it easy to integrate this multiplexer into various systems.

Maximum Operating Temperature: 125 °C

With a high operating temperature threshold, this multiplexer can function reliably even in harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and fast switching speeds, making this multiplexer energy-efficient and responsive.

Technical Specifications

Multiplexers & Switches NLAS4053DTG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

Maximum Negative Supply Voltage (Vsup):

-5.5 V

Minimum Negative Supply Voltage (Vsup):

0 V

Nominal Negative Supply Voltage (Vsup):

-3 V

No. of Channels:

2

No. of Functions:

3

No. of Terminals:

16

Nominal Off-state Isolation:

93 dB

Nominal On-state Resistance Match:

15 ohm

Maximum On-state Resistance (Ron):

37 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

-3,3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Signal Current:

.05 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.08 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

28 ns

Maximum Switch-on Time:

28 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

NLAS4053DTG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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