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NLAS1053US

Onsemi

NLAS1053US by Onsemi

NLAS1053US by Onsemi is a CMOS single-ended multiplexer with 2 channels. It operates at temperatures from -55 to 125 °C and has a max supply voltage of 5.5 V. With a nominal off-state isolation of 93 dB, it is ideal for military-grade applications requiring precise signal switching in compact spaces.

Median Price

$0.251

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 2,390 parts In-Stock

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$0.218

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Rochester

USA . 135 parts In-Stock

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$0.251

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$0.208

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$0.186

135

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$0.186

DigiKey

USA . 135 parts In-Stock

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$2.220

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135

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$2.220

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Distributors (In-Stock)

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Digiode

USA . 1,356 parts In-Stock

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$0.196

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Vyrian

USA . 2,934 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 451 parts In-Stock

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$0.185

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Vigor

Singapore . 257 parts In-Stock

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$0.200

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Corohmni

South Africa . 451 parts In-Stock

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$0.206

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Component Stockers USA

USA . 2,832 parts In-Stock

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$0.210

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$0.200

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$0.180

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AZTECH Wire

Italy . 887 parts In-Stock

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$15.430

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SupplyDigital Components

Austria . 7,696 parts In-Stock

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Kulean Microsystems

USA . 6,815 parts In-Stock

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RC Electronics

USA . 6,570 parts In-Stock

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TANS Electronics

Latvia . 4,397 parts In-Stock

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Continental Prestige Electronics

USA . 2,390 parts In-Stock

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$0.180

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Problanco Electronics

Mexico . 975 parts In-Stock

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UHIMA Technologies

Türkiye . 283 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic designs with the NLAS1053US by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Multiplexers & Switches that offer exceptional reliability and performance. This versatile product is perfect for a wide range of applications, providing customers with unmatched value, benefits, and advantages. Upgrade your projects with the NLAS1053US and experience seamless functionality and precision like never before. Trust Onsemi to meet all your electronic component needs with top-notch quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and resistant to environmental factors, ensuring the reliability of the product.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into electronic circuits, saving space and simplifying the assembly process.

Nominal Supply Voltage (Vsup): 4.5 V

Operates at a nominal supply voltage of 4.5 V, making it compatible with a wide range of electronic devices and systems.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures up to 125 °C, suitable for applications where heat dissipation is a concern.

Technology: CMOS

Utilizes CMOS technology, which offers low power consumption, high noise immunity, and fast switching speeds, making it an efficient choice for multiplexing and switching applications.

Technical Specifications

Multiplexers & Switches NLAS1053US attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Additional Features:

SPDT

Other IC type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

2.3 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Nominal Off-state Isolation:

93 dB

Nominal On-state Resistance Match:

3 ohm

Maximum On-state Resistance (Ron):

34 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

2.5/5

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Maximum Signal Current:

.05 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.002 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Maximum Switch-off Time:

12 ns

Maximum Switch-on Time:

12 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2 mm

Trade Compliance

NLAS1053US Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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