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NL3HS2222MUTBG

Onsemi

NL3HS2222MUTBG by Onsemi

NL3HS2222MUTBG by Onsemi is a DPDT switch with 10 terminals, operating from -40 to 85 °C. It offers low on-state resistance of 13.5 ohm and high off-state isolation of 22 dB. Ideal for industrial applications requiring fast switching times and precise signal routing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

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1k+

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Flip Electronics

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Bristol Electronics

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Digiode

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AZTECH Wire

Italy . 649 parts In-Stock

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RC Electronics

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Lixinc

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SupplyDigital Components

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Overview

Discover the NL3HS2222MUTBG by Onsemi, a top-tier manufacturer known for delivering high-quality multiplexers & switches. This surface-mountable device offers a compact chip carrier package with a very thin profile, making it ideal for industrial applications. With a nominal supply voltage of 2.7V and impressive operating temperatures, this DPDT IC provides reliable performance in any environment. Benefit from its minimal on-state resistance, quick switch-on/off times, and excellent isolation, ensuring seamless operation. Elevate your projects with the NL3HS2222MUTBG and experience unparalleled quality and efficiency.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes installation easier and saves space on a PCB.

Nominal Supply Voltage: 2.7 V

Suitable for low power applications and compatible with many electronic devices.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, suitable for industrial use.

Minimum Operating Temperature: -40 °C

Can operate in extremely cold environments without issues.

No. of Channels: 2

Allows for switching between two different channels, increasing versatility.

Technical Specifications

Multiplexers & Switches NL3HS2222MUTBG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-XQCC-N10

JESD-609 Code:

e4

Length:

1.8 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Nominal Off-state Isolation:

22 dB

Nominal On-state Resistance Match:

.6 ohm

Maximum On-state Resistance (Ron):

13.5 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

4.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Maximum Switch-off Time:

25 ns

Maximum Switch-on Time:

30 ns

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.4 mm

Trade Compliance

NL3HS2222MUTBG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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