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NL27WZ125MU3TCG

Onsemi

NL27WZ125MU3TCG by Onsemi

NL27WZ125MU3TCG by Onsemi is a 2-function bus driver with 32A max I (ol) and 13ns propagation delay. Ideal for military applications, it operates b/w -55 to 125 °C, with a supply voltage range of 1.65V to 5.5V. The small outline package has a very thin profile, making it suitable for space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,568 parts In-Stock

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Digiode

USA . 1,461 parts In-Stock

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SupplyDigital Components

Austria . 7,781 parts In-Stock

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TANS Electronics

Latvia . 5,218 parts In-Stock

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Problanco Electronics

Mexico . 5,008 parts In-Stock

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Kulean Microsystems

USA . 1,514 parts In-Stock

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Corphita

USA . 821 parts In-Stock

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Corohmni

South Africa . 449 parts In-Stock

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UHIMA Technologies

Türkiye . 130 parts In-Stock

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Overview

Are you looking for a reliable and high-quality bus driver & transceiver for your electronic applications? Look no further than the NL27WZ125MU3TCG by Onsemi! With a reputable manufacturer like Onsemi behind it, this product offers unparalleled value and benefits. Whether you need to drive buses or transceive data, this product has got you covered. Its compact package body material and 3-state output characteristics make it versatile for a wide range of applications. Trust Onsemi to provide you with top-notch products that deliver superior performance every time. Choose the NL27WZ125MU3TCG for all your bus driver & transceiver needs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and can protect the internal components of the bus driver and transceivers from external elements, making the product long-lasting and reliable.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation of the bus driver and transceivers on a printed circuit board, optimizing space utilization and simplifying assembly process.

Nominal Supply Voltage / Vsup (V): 2.3

Operating at a nominal supply voltage of 2.3V makes the bus driver and transceivers energy efficient and can help in reducing power consumption in the overall system.

Propagation Delay (tpd): 13 ns

With a low propagation delay of 13 nanoseconds, the bus driver and transceivers can transmit signals quickly and efficiently, ensuring smooth communication within the system.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C makes the bus driver and transceivers suitable for use in harsh environmental conditions, enhancing the product's reliability and durability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the bus driver and transceivers energy efficient and reliable for use in various electronic applications.

Technical Specifications

Bus Driver & Transceivers NL27WZ125MU3TCG attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE LOW

Count Direction:

BIDIRECTIONAL

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-N8

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Bits:

1

No. of Functions:

2

No. of Ports:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay (tpd):

13 ns

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1 mm

Trade Compliance

NL27WZ125MU3TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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