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NL27WZ126MU1TCG

Onsemi

NL27WZ126MU1TCG by Onsemi

NL27WZ126MU1TCG by Onsemi is a 2-function bus driver with 4.8ns propagation delay, suitable for military applications. It operates at a voltage range of 1.65V to 5.5V and has a max operating temperature of 125 °C, making it ideal for high-performance systems requiring fast signal transmission in harsh environments. The small outline package with very thin profile and surface mount capability enhances its versatility in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,470 parts In-Stock

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Digiode

USA . 1,374 parts In-Stock

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Kulean Microsystems

USA . 7,729 parts In-Stock

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SupplyDigital Components

Austria . 3,675 parts In-Stock

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Corphita

USA . 2,203 parts In-Stock

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Problanco Electronics

Mexico . 1,574 parts In-Stock

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TANS Electronics

Latvia . 592 parts In-Stock

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UHIMA Technologies

Türkiye . 553 parts In-Stock

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Corohmni

South Africa . 424 parts In-Stock

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Overview

Enhance your electronic designs with the NL27WZ126MU1TCG by Onsemi, a top-tier manufacturer known for their superior quality and reliability. As a Bus Driver & Transceivers component, this product offers seamless integration, fast propagation delay, and versatile functionality with its 3-STATE output characteristics. Ideal for military-grade applications, this small outline, very thin profile package is designed with precision and efficiency in mind, ensuring optimal performance even in extreme temperatures. Elevate your projects with Onsemi's exceptional technology and unlock endless possibilities for your next innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, which is important for a portable bus driver & transceiver.

Propagation Delay At Nominal Supply: 4.8 ns

The low propagation delay ensures quick response time, making this product suitable for high-speed data transmission in bus systems.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on a circuit board.

No. of Functions: 2

Having multiple functions in a single component enhances the efficiency and performance of the bus driver & transceiver.

Nominal Supply Voltage / Vsup (V): 2.3

The low nominal supply voltage helps in reducing power consumption and heat generation in the system.

Load Capacitance (CL): 50 pF

The specified load capacitance ensures stable operation and reliable signal transmission in the bus system.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

The small outline and thin profile of the package make it space-efficient and suitable for compact bus system designs.

Maximum I (ol): 24 Amp

The high maximum output current capability allows the product to drive multiple loads without any issues.

Output Characteristics: 3-STATE

The 3-state output feature provides additional flexibility in controlling the bus signals and managing bus conflicts.

Temperature Grade: MILITARY

With military-grade temperature range, this product can operate in harsh environmental conditions without any performance degradation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable in data transmission.

Technical Specifications

Bus Driver & Transceivers NL27WZ126MU1TCG attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE HIGH

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-N8

Length:

1.95 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Bits:

1

No. of Functions:

2

No. of Ports:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.8 ns

Propagation Delay (tpd):

13 ns

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1 mm

Trade Compliance

NL27WZ126MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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