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NDBA100N10BT4H

Onsemi

NDBA100N10BT4H by Onsemi

Power Field-Effect Transistors; Peak Reflow Temperature (C): 245; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN;

Median Price

$1.140

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8,765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.970

10k+ parts

-

8,765

-

-

$0.970

-

Rochester

USA . 8,520 parts In-Stock

1+ parts

-

100+ parts

$1.140

1k+ parts

$0.946

10k+ parts

$0.844

8,520

-

$1.140

$0.946

$0.844

Verical

USA . 8,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.183

10k+ parts

$1.054

8,520

-

-

$1.183

$1.054

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 182 parts In-Stock

1+ parts

$0.885

100+ parts

-

1k+ parts

-

10k+ parts

-

182

$0.885

-

-

-

Vyrian

USA . 1,193 parts In-Stock

1+ parts

$0.932

100+ parts

-

1k+ parts

-

10k+ parts

-

1,193

$0.932

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,575 parts In-Stock

1+ parts

$0.839

100+ parts

-

1k+ parts

-

10k+ parts

-

1,575

$0.839

-

-

-

Corohmni

South Africa . 266 parts In-Stock

1+ parts

$0.932

100+ parts

-

1k+ parts

-

10k+ parts

-

266

$0.932

-

-

-

Component Stockers USA

USA . 12,484 parts In-Stock

1+ parts

$0.940

100+ parts

$0.880

1k+ parts

$0.800

10k+ parts

-

12,484

$0.940

$0.880

$0.800

-

Microchip USA

USA . 2,753 parts In-Stock

1+ parts

$5.785

100+ parts

-

1k+ parts

-

10k+ parts

-

2,753

$5.785

-

-

-

Continental Prestige Electronics

USA . 8,765 parts In-Stock

1+ parts

-

100+ parts

$0.855

1k+ parts

-

10k+ parts

-

8,765

-

$0.855

-

-

Problanco Electronics

Mexico . 6,403 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,403

-

-

-

-

Kulean Microsystems

USA . 5,979 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,979

-

-

-

-

TANS Electronics

Latvia . 1,768 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,768

-

-

-

-

Perfect Parts

USA . 1,064 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,064

-

-

-

-

UHIMA Technologies

Türkiye . 603 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

603

-

-

-

-

SupplyDigital Components

Austria . 72 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

72

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) NDBA100N10BT4H attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

245

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NDBA100N10BT4H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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