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NCV8402DDR2G

Onsemi

NCV8402DDR2G by Onsemi

NCV8402DDR2G by Onsemi is a peripheral driver with 2 functions, AEC-Q101 screening level, and built-in protections for transient, over current, over voltage, and thermal issues. It operates in a temperature range of -55 to 150°C and has a max output current of 2A. Ideal for military-grade applications requiring buffer or inverter-based peripheral drivers.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 51,000 parts In-Stock

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Vyrian

USA . 4,249 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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870

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LWI Electronics Inc

India . 274 parts In-Stock

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Digiode

USA . 202 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,402 parts In-Stock

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$2.490

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4,402

$2.490

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AZTECH Wire

Italy . 380 parts In-Stock

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$14.889

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Ampacity Inc.

Singapore . 375 parts In-Stock

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$35.500

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Lixinc

USA . 8,741 parts In-Stock

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TANS Electronics

Latvia . 8,070 parts In-Stock

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Continental Prestige Electronics

USA . 4,086 parts In-Stock

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Kulean Microsystems

USA . 3,159 parts In-Stock

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SupplyDigital Components

Austria . 3,006 parts In-Stock

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Argo Parts USA

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Microchip USA

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Vigor

Singapore . 250 parts In-Stock

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Problanco Electronics

Mexico . 185 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 146 parts In-Stock

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Kepictronics

USA . 105 parts In-Stock

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Corohmni

South Africa . 99 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Discover the powerful NCV8402DDR2G by Onsemi - a top-of-the-line peripheral driver designed to deliver exceptional quality and reliability. With built-in protections against transient, over current, over voltage, and thermal issues, this product ensures maximum safety and efficiency in various applications. From automotive to industrial uses, this compact and versatile device offers customers unparalleled value and performance. Trust Onsemi's expertise and innovation to elevate your projects to new heights with the NCV8402DDR2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for long-lasting performance.

No. of Functions: 2

Provides flexibility and functionality in driving peripherals.

Built-in Protections: TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

Ensures safety and protection of connected peripherals from various electrical faults.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Minimum Operating Temperature: -55 °C

Suitable for use in extreme cold conditions.

Maximum Output Current: 2 A

Capable of driving peripherals with higher power requirements.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

Versatile interface options for different types of peripherals.

Technical Specifications

Peripheral Drivers NCV8402DDR2G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Output Current Flow Direction:

SINK

Maximum Output Current:

2 A

Nominal Output Peak Current Limit:

4.8 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

AEC-Q101

Maximum Seated Height:

1.75 mm

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

120 us

Turn-on Time:

25 us

Width:

3.9 mm

Trade Compliance

NCV8402DDR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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