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NCS2203SN2T1

Onsemi

NCS2203SN2T1 by Onsemi

NCS2203SN2T1 by Onsemi is a CMOS comparator with 8000uV max input offset voltage, 0.01uA max average bias current, and 1100ns nominal response time. Ideal for industrial applications requiring a compact design, it features a small outline package with dual gull wing terminals and operates b/w -40 to 105 °C.

Median Price

$0.267

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

18,000

-

$0.277

$0.230

$0.205

Verical

USA . 18,000 parts In-Stock

1+ parts

-

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-

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$0.257

18,000

-

-

-

$0.257

Distributors (In-Stock)

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Digiode

USA . 594 parts In-Stock

1+ parts

$0.217

100+ parts

-

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594

$0.217

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Vyrian

USA . 7,307 parts In-Stock

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7,307

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Distributors (Availability)

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Corphita

USA . 1,664 parts In-Stock

1+ parts

$0.205

100+ parts

-

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1,664

$0.205

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Vigor

Singapore . 175 parts In-Stock

1+ parts

$0.220

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175

$0.220

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Corohmni

South Africa . 57 parts In-Stock

1+ parts

$0.228

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57

$0.228

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AZTECH Wire

Italy . 328 parts In-Stock

1+ parts

$11.130

100+ parts

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328

$11.130

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Continental Prestige Electronics

USA . 18,000 parts In-Stock

1+ parts

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100+ parts

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$0.193

10k+ parts

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18,000

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$0.193

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SupplyDigital Components

Austria . 7,741 parts In-Stock

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7,741

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Kulean Microsystems

USA . 6,676 parts In-Stock

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6,676

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A-Z Elektronik GmbH

Germany . 5,505 parts In-Stock

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5,505

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TANS Electronics

Latvia . 1,978 parts In-Stock

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1,978

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Problanco Electronics

Mexico . 757 parts In-Stock

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757

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UHIMA Technologies

Türkiye . 177 parts In-Stock

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177

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Microchip USA

USA . 109 parts In-Stock

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109

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Overview

Discover the NCS2203SN2T1 by Onsemi, a high-quality comparator offering precision and reliability for a wide range of applications. With a reputation for excellence, Onsemi delivers cutting-edge technology in a compact package, perfect for industrial-grade systems. This versatile comparator boasts a fast response time and low bias current, ensuring optimal performance in critical operations. Experience the value and benefits of the NCS2203SN2T1, where quality meets innovation for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is durable and can withstand various environmental conditions, making this product suitable for industrial use.

Maximum Input Offset Voltage: 8000 uV

High input offset voltage allows for accurate and precise comparisons between input signals, ensuring reliable performance.

Surface Mount: YES

Being surface mountable makes this comparator easy to integrate into circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V makes this comparator compatible with a wide range of systems and power sources.

Output Type: OPEN-DRAIN

The open-drain output type allows for easy interfacing with other components and ensures compatibility with different logic levels.

Temperature Grade: INDUSTRIAL

With an industrial temperature grade, this comparator can operate in harsh temperature conditions, making it suitable for industrial applications.

Technology: CMOS

Utilizing CMOS technology results in low power consumption and high speed performance, making this comparator efficient and reliable.

Technical Specifications

Comparators NCS2203SN2T1 attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

1/5 V

Total Functions:

1

Sub-Category:

Comparators

Output Type:

Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

8 mV

Peak Bias Current:

10 nA

Maximum Bias Current (IIB) @25 °C:

10 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Nominal Response Time:

1.1 µs

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

6

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

Package Shape:

Package Type:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP6,.11,37

Trade Compliance

NCS2203SN2T1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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