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NCS2200SN2T1

Onsemi

NCS2200SN2T1 by Onsemi

NCS2200SN2T1 by Onsemi is a CMOS comparator with 8000uV max input offset voltage, 0.01uA max average bias current, and 1100ns nominal response time. Ideal for industrial applications requiring push-pull output type in a small outline package with dual terminals.

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AZTECH Wire

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Kulean Microsystems

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Overview

Experience the next level of precision and reliability with the NCS2200SN2T1 by Onsemi. As a leading manufacturer in the industry, Onsemi's commitment to quality is unmatched. The NCS2200SN2T1 is a versatile comparator that offers exceptional performance in a variety of applications. From automotive to industrial settings, this product delivers value and benefits that exceed expectations. Trust Onsemi to provide you with a solution that meets your needs and surpasses your standards. Elevate your projects with the NCS2200SN2T1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the comparator lightweight and durable, perfect for portable and rugged applications.

Maximum Input Offset Voltage: 8000 uV

With a high maximum input offset voltage, this comparator offers accurate and precise measurements, suitable for demanding applications where accuracy is crucial.

Maximum Average Bias Current (IIB): 0.01 uA

The low average bias current ensures minimal power consumption and high efficiency in operation.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage makes this comparator compatible with a wide range of systems and power sources.

Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch design of the package make it suitable for compact and space-constrained applications.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this comparator can function reliably in harsh environmental conditions without any performance degradation.

Output Type: PUSH-PULL

The push-pull output type ensures high output driving capability, making it suitable for driving loads directly without additional buffer circuitry.

Nominal Response Time: 1100 ns

The fast nominal response time enables quick and precise response to input signals, ideal for applications requiring rapid signal processing.

Technology: CMOS

Utilizing CMOS technology offers low power consumption, high speed, and compatibility with a wide range of digital systems.

Technical Specifications

Comparators NCS2200SN2T1 attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

1/5 V

Total Functions:

1

Sub-Category:

Comparators

Output Type:

Push-Pull

Performance Specifications

Maximum Input Offset Voltage:

8 mV

Peak Bias Current:

10 nA

Maximum Bias Current (IIB) @25 °C:

10 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Nominal Negative Supply Voltage (Vsup):

0 V

Maximum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Nominal Response Time:

1.1 µs

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

Package Shape:

Package Type:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

NCS2200SN2T1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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