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LM211DR2

Onsemi

LM211DR2 by Onsemi

LM211DR2 by Onsemi is a comparator with a max input offset voltage of 4000 uV and max average bias current of 0.15 uA. It operates at temperatures ranging from -25 to 85 °C and has an open-collector output type. This small outline package is ideal for applications requiring precise voltage comparisons in electronic circuits.

Median Price

$0.338

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

USA . 892 parts In-Stock

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$0.338

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Dan-Mar Components

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Vyrian

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Nova Conductors

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Ampacity Inc.

Singapore . 336 parts In-Stock

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$0.410

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Advanced Electronics

New Zealand . 99 parts In-Stock

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$0.746

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$0.679

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Corohmni

South Africa . 75 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,217 parts In-Stock

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AZTECH Wire

Italy . 772 parts In-Stock

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Lixinc

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A-Z Elektronik GmbH

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Microchip USA

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Kulean Microsystems

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Alle Elektronik GmbH

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Problanco Electronics

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Continental Prestige Electronics

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GreenTree Electronics

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TANS Electronics

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Overview

Looking for a reliable and high-quality comparator for your electronic projects? Look no further than the LM211DR2 by Onsemi. With its superior manufacturing standards and versatile applications in various industries, this comparator offers unmatched value and benefits to customers. From its compact package body material to its low bias current, this product is designed to deliver optimal performance and accuracy. Whether you're working on automotive systems, industrial automation, or consumer electronics, the LM211DR2 is the perfect solution for all your comparator needs. Experience the precision and reliability that Onsemi is known for with the LM211DR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the comparator, ensuring reliability and durability.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage ensures accurate and precise comparisons between input signals.

Maximum Average Bias Current (IIB): 0.15 uA

Low bias current helps in minimizing power consumption and signal distortion in the comparator.

Surface Mount: YES

Surface mount technology makes it easy to integrate this comparator into compact electronic circuits.

Nominal Supply Voltage / Vsup (V): 15

Suitable supply voltage for stable and efficient operation of the comparator.

Output Type: OPEN-COLLECTOR

Open-collector output allows for easy interfacing with other digital circuits and components.

Nominal Response Time: 200 ns

Fast response time enables quick and accurate comparisons of input signals.

Technology: BIPOLAR

Bipolar technology offers high input impedance and low offset voltage, ideal for precision applications.

Technical Specifications

Comparators LM211DR2 attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Comparators

Output Type:

Open-Collector

Performance Specifications

Maximum Input Offset Voltage:

4 mV

Peak Bias Current:

150 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

235 °C (455 °F)

Nominal Response Time:

200 ns

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Type:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

LM211DR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-453-6762, 5962014536762

NIIN

014536762

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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