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NCS2004SQ3T2G

Onsemi

NCS2004SQ3T2G by Onsemi

NCS2004SQ3T2G by Onsemi is a CMOS operational amplifier with 7000uV max input offset voltage, 130dB common mode reject ratio, and 1.8V/us min slew rate. Ideal for industrial applications requiring low-bias amplification in a compact package with Vsup of +-16.5V and operating temperature range from -40 to 105 °C.

Median Price

$0.658

Lifecycle Status

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11

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1k+

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Arrow

USA . 1,582 parts In-Stock

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$0.270

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$0.250

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$0.240

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Farnell

UK . 404,119 parts In-Stock

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$0.545

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$0.545

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Rochester

USA . 274,159 parts In-Stock

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$0.771

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$0.640

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$0.571

274,159

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$0.771

$0.640

$0.571

Verical

USA . 223,359 parts In-Stock

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$0.800

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$0.714

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$0.714

Distributors (In-Stock)

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Digiode

USA . 1,563 parts In-Stock

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$0.256

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Vyrian

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ACDS - Activité Composants Distribution Service

France . 2,587 parts In-Stock

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Bristol Electronics

USA . 2,587 parts In-Stock

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Dan-Mar Components

USA . 2,587 parts In-Stock

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Semtec, LLC

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SPM Sales

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Corphita

USA . 2,396 parts In-Stock

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$0.243

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Corohmni

South Africa . 89 parts In-Stock

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Continental Prestige Electronics

USA . 404,119 parts In-Stock

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$0.545

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Vigor

Singapore . 164 parts In-Stock

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$1.400

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AZTECH Wire

Italy . 836 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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Kepictronics

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S.R.D Solutions

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GreenTree Electronics

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Microchip USA

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Overview

Experience top-notch performance with the NCS2004SQ3T2G operational amplifier from Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional quality and reliability in their products. The NCS2004SQ3T2G is perfect for a wide range of applications, offering precise amplification and high functionality. With its low bias current and nominal common mode reject ratio, this operational amplifier provides unmatched value and benefits to customers. Upgrade your projects with the NCS2004SQ3T2G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the operational amplifier, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accurate signal processing, making this op amp suitable for precision circuit designs.

Maximum Average Bias Current (IIB): 0.00015 uA

Low bias current helps in reducing power consumption and improving overall efficiency of the circuit.

Nominal Common Mode Reject Ratio: 130 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference from the input signals, leading to a clean output.

Minimum Slew Rate: 1.8 V/us

Fast slew rate enables the op amp to respond quickly to input signal changes, making it suitable for applications requiring rapid signal processing.

Nominal Unity Gain Bandwidth: 3500 kHz

High unity gain bandwidth ensures stable operation and accurate amplification of signals across a wide frequency range.

Maximum Supply Current: 1 mA

Low supply current consumption makes this op amp energy-efficient and suitable for battery-powered applications.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and rail-to-rail output swing, making it ideal for low-voltage and high-speed applications.

Technical Specifications

Operational Amplifiers (Op Amps) NCS2004SQ3T2G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.25/±8/2.5/16 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

No

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3.5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

130 dB

Minimum Common Mode Rejection Ratio (CMRR ):

55 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

6300

Minimum Slew Rate:

1.8 V/us

Nominal Slew Rate:

2.3 V/us

Maximum Input Offset Current (IIO):

150 pA

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

16.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin - annealed

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP5/6,.08

Trade Compliance

NCS2004SQ3T2G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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