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NCS20082DR2G

Onsemi

NCS20082DR2G by Onsemi

NCS20082DR2G by Onsemi is a micropower operational amplifier with low-bias current and voltage-feedback architecture. It features a max input offset voltage of 4000 uV, nominal voltage of 3.3 V, and nominal unity gain bandwidth of 1200 kHz. Ideal for automotive applications requiring precise signal amplification in compact designs.

Median Price

$0.670

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,963 parts In-Stock

1+ parts

$0.670

100+ parts

$0.371

1k+ parts

$0.317

10k+ parts

-

2,963

$0.670

$0.371

$0.317

-

Mouser Electronics

USA . 857 parts In-Stock

1+ parts

$0.670

100+ parts

$0.371

1k+ parts

$0.318

10k+ parts

$0.294

857

$0.670

$0.371

$0.318

$0.294

Flip Electronics (Authorized)

USA . 812 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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812

-

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Rochester

USA . 148 parts In-Stock

1+ parts

-

100+ parts

$0.348

1k+ parts

$0.289

10k+ parts

$0.258

148

-

$0.348

$0.289

$0.258

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 216 parts In-Stock

1+ parts

$0.271

100+ parts

-

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216

$0.271

-

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Nova Conductors

Japan . 87 parts In-Stock

1+ parts

$0.349

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87

$0.349

-

-

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Bristol Electronics

USA . 1,420 parts In-Stock

1+ parts

$0.722

100+ parts

$0.267

1k+ parts

$0.188

10k+ parts

-

1,420

$0.722

$0.267

$0.188

-

Chip Stock

USA . 62,000 parts In-Stock

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62,000

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

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$0.327

5,000

-

-

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$0.327

Vyrian

USA . 3,350 parts In-Stock

1+ parts

-

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3,350

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ACDS - Activité Composants Distribution Service

France . 1,420 parts In-Stock

1+ parts

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1,420

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Dan-Mar Components

USA . 1,420 parts In-Stock

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1,420

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Flip Electronics

USA . 812 parts In-Stock

1+ parts

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812

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J2 Sourcing AB

Sweden . 200 parts In-Stock

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 5,724 parts In-Stock

1+ parts

$0.079

100+ parts

$0.077

1k+ parts

$0.077

10k+ parts

-

5,724

$0.079

$0.077

$0.077

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Ampacity Inc.

Singapore . 3,409 parts In-Stock

1+ parts

$0.242

100+ parts

-

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3,409

$0.242

-

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Corphita

USA . 2,097 parts In-Stock

1+ parts

$0.256

100+ parts

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2,097

$0.256

-

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Corohmni

South Africa . 116 parts In-Stock

1+ parts

$0.285

100+ parts

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116

$0.285

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Continental Prestige Electronics

USA . 3,536 parts In-Stock

1+ parts

$0.349

100+ parts

-

1k+ parts

-

10k+ parts

$0.342

3,536

$0.349

-

-

$0.342

Argo Parts USA

USA . 1,027 parts In-Stock

1+ parts

$0.349

100+ parts

-

1k+ parts

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10k+ parts

$0.339

1,027

$0.349

-

-

$0.339

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.349

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100

$0.349

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Vigor

Singapore . 249 parts In-Stock

1+ parts

$0.800

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249

$0.800

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$6.227

100+ parts

$5.667

1k+ parts

$5.106

10k+ parts

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600

$6.227

$5.667

$5.106

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Aztec Data Supply Inc.

USA . 1,310 parts In-Stock

1+ parts

$6.430

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1,310

$6.430

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Lixinc

USA . 17,270 parts In-Stock

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17,270

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Problanco Electronics

Mexico . 5,022 parts In-Stock

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Kulean Microsystems

USA . 4,219 parts In-Stock

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TANS Electronics

Latvia . 3,908 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,922 parts In-Stock

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2,922

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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SupplyDigital Components

Austria . 529 parts In-Stock

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529

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UHIMA Technologies

Türkiye . 361 parts In-Stock

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361

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Overview

Discover the cutting-edge NCS20082DR2G by Onsemi, a high-quality operational amplifier that offers unparalleled performance and reliability. Manufactured by the renowned Onsemi, this product is designed for various applications in automotive and industrial settings, providing exceptional value and benefits to customers. With its low-bias micropower design and voltage-feedback architecture, this amplifier ensures optimal performance and efficiency, making it the ideal choice for your next project. Upgrade your system with the NCS20082DR2G and experience superior quality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is lightweight and cost-effective, making this product suitable for mass production.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage ensures accurate signal processing and minimal errors in the output.

Maximum Average Bias Current (IIB): 0.0015 uA

Low bias current helps in minimizing power consumption and improving overall efficiency.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and space-saving design.

Nominal Common Mode Reject Ratio: 76 dB

High common mode rejection ratio helps in rejecting common-mode noise and interference for clean signal output.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a nominal supply voltage of 3.3V, making it suitable for low-power applications.

Maximum Seated Height: 1.75 mm

Low profile design with a maximum seated height of 1.75mm saves space and allows for compact product designs.

Nominal Unity Gain Bandwidth: 1200 kHz

High unity gain bandwidth allows for high-frequency signal processing and improved performance.

Maximum Supply Current: 0.14 mA

Low supply current helps in efficient power usage and extends battery life in battery-powered applications.

Technical Specifications

Operational Amplifiers (Op Amps) NCS20082DR2G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

No

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

76 dB

Minimum Common Mode Rejection Ratio (CMRR ):

53 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

19952.62

Nominal Slew Rate:

0.4 V/us

Maximum Input Offset Current (IIO):

1.1 nA

Peak Bias Current:

1.5 nA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

25 °C (77 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

140 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.24

Trade Compliance

NCS20082DR2G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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