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NCS20081SN2T1G

Onsemi

NCS20081SN2T1G by Onsemi

NCS20081SN2T1G by Onsemi is a micropower operational amplifier with low-bias and voltage-feedback architecture. It features a max input offset voltage of 4000 uV, nominal voltage of 3.3 V, and min voltage gain of 19952.62. Ideal for automotive applications requiring high precision and low power consumption.

Median Price

$0.199

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 199 parts In-Stock

1+ parts

$0.167

100+ parts

$0.157

1k+ parts

$0.142

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-

199

$0.167

$0.157

$0.142

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DigiKey

USA . 18,380 parts In-Stock

1+ parts

$0.420

100+ parts

$0.224

1k+ parts

$0.189

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18,380

$0.420

$0.224

$0.189

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Mouser Electronics

USA . 17,600 parts In-Stock

1+ parts

$0.420

100+ parts

$0.225

1k+ parts

$0.190

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17,600

$0.420

$0.225

$0.190

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Verical

USA . 36,000 parts In-Stock

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$0.151

36,000

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$0.151

Arrow

USA . 3,000 parts In-Stock

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$0.199

3,000

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$0.199

Distributors (In-Stock)

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Digiode

USA . 2,139 parts In-Stock

1+ parts

$0.159

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2,139

$0.159

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Flip Electronics

USA . 15,000 parts In-Stock

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15,000

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Vyrian

USA . 8,879 parts In-Stock

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8,879

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Chip Stock

USA . 5,200 parts In-Stock

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5,200

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Nova Conductors

Japan . 65 parts In-Stock

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65

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Distributors (Availability)

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Semicontronic

India . 16,047 parts In-Stock

1+ parts

$0.073

100+ parts

$0.071

1k+ parts

$0.071

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-

16,047

$0.073

$0.071

$0.071

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Vigor

Singapore . 709 parts In-Stock

1+ parts

$0.140

100+ parts

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709

$0.140

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Ampacity Inc.

Singapore . 15,199 parts In-Stock

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$0.142

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15,199

$0.142

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Corphita

USA . 1,583 parts In-Stock

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$0.150

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1,583

$0.150

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Corohmni

South Africa . 251 parts In-Stock

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$0.167

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251

$0.167

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.251

100+ parts

$0.231

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$0.217

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270

$0.251

$0.231

$0.217

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Aztec Data Supply Inc.

USA . 4,944 parts In-Stock

1+ parts

$5.120

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4,944

$5.120

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Perfect Parts

USA . 6,541 parts In-Stock

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TANS Electronics

Latvia . 5,323 parts In-Stock

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Argo Parts USA

USA . 3,634 parts In-Stock

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Continental Prestige Electronics

USA . 3,230 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,922 parts In-Stock

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Kepictronics

USA . 2,920 parts In-Stock

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Problanco Electronics

Mexico . 2,171 parts In-Stock

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Kulean Microsystems

USA . 1,537 parts In-Stock

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Bastille Electronics

Australia . 750 parts In-Stock

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750

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SupplyDigital Components

Austria . 439 parts In-Stock

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UHIMA Technologies

Türkiye . 56 parts In-Stock

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Overview

Discover the NCS20081SN2T1G by Onsemi, a cutting-edge operational amplifier that delivers exceptional performance in various applications. With a focus on quality and innovation, Onsemi has created a product that offers unmatched value to customers seeking precision and reliability. The compact design and low power consumption make it ideal for automotive and micropower applications. Trust Onsemi to provide you with the tools you need to succeed in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package makes the product lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 4000 uV

With a low maximum input offset voltage, this operational amplifier provides accurate output voltage with minimal error.

Maximum Average Bias Current (IIB): 0.0015 uA

The low bias current ensures minimal distortion in signals, making this product suitable for high-precision applications.

Surface Mount: YES

Being surface-mountable, this operational amplifier is easy to integrate into compact electronic designs.

Nominal Supply Voltage / Vsup (V): 3.3

With a low nominal supply voltage, this op amp is energy-efficient and suitable for battery-powered devices.

No. of Terminals: 5

The 5 terminals provide flexibility in connecting external components, allowing for versatile circuit designs.

Nominal Unity Gain Bandwidth: 1200 kHz

With a high unity gain bandwidth, this op amp is capable of processing signals efficiently across a wide frequency range.

Maximum Supply Current: 0.07 mA

The low maximum supply current consumption makes this operational amplifier suitable for applications requiring low power consumption.

Technical Specifications

Operational Amplifiers (Op Amps) NCS20081SN2T1G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

No

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

76 dB

Minimum Common Mode Rejection Ratio (CMRR ):

53 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

19952.62

Nominal Slew Rate:

0.4 V/us

Maximum Input Offset Current (IIO):

1.1 nA

Peak Bias Current:

1.5 nA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

25 °C (77 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

70 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

NCS20081SN2T1G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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