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NCS2002SN2T1G

Onsemi

NCS2002SN2T1G by Onsemi

NCS2002SN2T1G by Onsemi is a CMOS Operational Amplifier with 7500uV Max Input Offset Voltage, 82dB Common Mode Reject Ratio, and 900kHz Unity Gain Bandwidth. Ideal for industrial applications requiring low-bias amplification in compact designs due to its small outline package and wide temperature range of -40 to 105°C.

Median Price

$0.564

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 204 parts In-Stock

1+ parts

$0.960

100+ parts

$0.547

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204

$0.960

$0.547

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Rochester

USA . 130,538 parts In-Stock

1+ parts

-

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$0.543

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$0.451

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$0.402

130,538

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$0.543

$0.451

$0.402

Verical

USA . 117,000 parts In-Stock

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$0.564

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$0.502

117,000

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$0.564

$0.502

Flip Electronics (Authorized)

USA . 90,000 parts In-Stock

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Digiode

USA . 883 parts In-Stock

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$0.444

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883

$0.444

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Flip Electronics

USA . 90,000 parts In-Stock

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Vyrian

USA . 9,105 parts In-Stock

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Chip Stock

USA . 5,050 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,970 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 150 parts In-Stock

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$0.395

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$0.395

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Corphita

USA . 1,076 parts In-Stock

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$0.420

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1,076

$0.420

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Component Stockers USA

USA . 119,988 parts In-Stock

1+ parts

$0.470

100+ parts

$0.450

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$0.400

10k+ parts

$0.400

119,988

$0.470

$0.450

$0.400

$0.400

Vigor

Singapore . 449 parts In-Stock

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$1.120

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449

$1.120

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$7.144

100+ parts

$6.501

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$5.858

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2,500

$7.144

$6.501

$5.858

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Continental Prestige Electronics

USA . 130,788 parts In-Stock

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$0.381

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Perfect Parts

USA . 8,435 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,569 parts In-Stock

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SupplyDigital Components

Austria . 6,213 parts In-Stock

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Kulean Microsystems

USA . 4,904 parts In-Stock

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Microchip USA

USA . 4,791 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,970 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Glotronic Ltd.

UK . 2,376 parts In-Stock

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Problanco Electronics

Mexico . 1,952 parts In-Stock

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TANS Electronics

Latvia . 714 parts In-Stock

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UHIMA Technologies

Türkiye . 169 parts In-Stock

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Overview

Enhance the performance of your electronic designs with the NCS2002SN2T1G by Onsemi. As a leading manufacturer in the industry, Onsemi is known for its high-quality operational amplifiers like this one. Ideal for a wide range of applications, this operational amplifier offers exceptional value with its low-bias technology, industrial temperature grade, and compact design. Experience reliable operation and precise signal processing with the NCS2002SN2T1G, designed to meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 7500 uV

The low maximum input offset voltage ensures accurate and precise operation of the operational amplifier in various applications.

Surface Mount: YES

Being surface mountable makes this operational amplifier suitable for compact designs and easy assembly onto circuit boards.

Nominal Common Mode Reject Ratio: 82 dB

The high common mode reject ratio of 82 dB helps in rejecting common mode noise and interference, resulting in cleaner and more accurate output signals.

Nominal Supply Voltage / Vsup (V): 2.5

The nominal supply voltage of 2.5V makes this operational amplifier energy-efficient and suitable for low-power applications.

No. of Terminals: 6

Having 6 terminals allows for versatile connectivity options in circuit designs and applications.

Minimum Slew Rate: 0.85 V/us

The minimum slew rate of 0.85 V/us indicates the operational amplifier's ability to respond quickly to changes in input signals, making it suitable for high-speed applications.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature of 105°C ensures the operational amplifier can withstand elevated temperatures and operate reliably in demanding environments.

Nominal Voltage Gain: 10000

The high nominal voltage gain of 10000 amplifies input signals effectively, making this operational amplifier appropriate for applications requiring signal amplification.

Technology: CMOS

Utilizing CMOS technology, this operational amplifier offers low power consumption, high input impedance, and high-speed operation, making it ideal for battery-powered devices and high-frequency applications.

Technical Specifications

Operational Amplifiers (Op Amps) NCS2002SN2T1G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

900 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

7500 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.85 V/us

Nominal Slew Rate:

1.2 V/us

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

3.5 V

Maximum Negative Supply Voltage:

-2.5 V

Minimum Negative Supply Voltage:

-3.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

6

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin - annealed

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP6,.11,37

Trade Compliance

NCS2002SN2T1G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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