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NCS2001SQ2T2

Onsemi

NCS2001SQ2T2 by Onsemi

NCS2001SQ2T2 by Onsemi is an Operational Amplifier with a Max Input Offset Voltage of 7500uV, Nominal Voltage of 2.5V, and Min Slew Rate of 1V/us. It is ideal for industrial applications requiring low-bias amplification in a compact package style with surface mount capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 57,000 parts In-Stock

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Vyrian

USA . 10,308 parts In-Stock

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Digiode

USA . 1,665 parts In-Stock

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AZTECH Wire

Italy . 678 parts In-Stock

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$17.230

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Component Stockers USA

USA . 457 parts In-Stock

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$99.990

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457

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Kulean Microsystems

USA . 7,619 parts In-Stock

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TANS Electronics

Latvia . 6,482 parts In-Stock

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SupplyDigital Components

Austria . 2,322 parts In-Stock

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Problanco Electronics

Mexico . 1,422 parts In-Stock

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Corphita

USA . 1,150 parts In-Stock

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UHIMA Technologies

Türkiye . 643 parts In-Stock

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Vigor

Singapore . 637 parts In-Stock

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Corohmni

South Africa . 493 parts In-Stock

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Microchip USA

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Overview

Experience top-notch performance with the NCS2001SQ2T2 Operational Amplifier by Onsemi. Crafted with precision and expertise, this product delivers unparalleled quality and reliability. Perfect for a wide range of applications in industries such as automotive, industrial, and consumer electronics, this operational amplifier offers exceptional value with its low power consumption, high slew rate, and wide supply voltage range. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Elevate your designs with the NCS2001SQ2T2 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability while keeping the product lightweight.

Maximum Input Offset Voltage: 7500 uV

Ensures accurate and stable performance in various applications.

Nominal Common Mode Reject Ratio: 70 dB

Offers high rejection of common mode noise for improved signal integrity.

Minimum Slew Rate: 1 V/us

Allows for fast response times and precise signal handling.

Nominal Unity Gain Bandwidth: 1400 kHz

Enables high-frequency operation and signal processing capabilities.

Minimum Operating Temperature: -40 °C

Suitable for a wide range of operating environments.

Maximum Supply Current: 1.5 mA

Low power consumption for efficient operation.

Technical Specifications

Operational Amplifiers (Op Amps) NCS2001SQ2T2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±0.45/±2.5/0.9/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

7500 uV

Minimum Voltage Gain:

20000

Minimum Slew Rate:

1 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

10 pA

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

3.5 V

Maximum Negative Supply Voltage:

-2.5 V

Minimum Negative Supply Voltage:

-3.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP6,.08

Trade Compliance

NCS2001SQ2T2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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