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NCS2001SN1T1

Onsemi

NCS2001SN1T1 by Onsemi

NCS2001SN1T1 by Onsemi is a CMOS operational amplifier with 7500uV max input offset voltage, 70dB common mode reject ratio, and 1400kHz unity gain bandwidth. Ideal for industrial applications requiring low-bias amplification in compact designs due to its small outline package and low power consumption of 1.5mA at +-2.5V supplies.

Median Price

$0.314

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,927 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

5,927

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$0.277

$0.230

$0.205

DigiKey

USA . 5,927 parts In-Stock

1+ parts

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$0.350

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5,927

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$0.350

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Farnell

UK . 5,927 parts In-Stock

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$0.350

5,927

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$0.350

Verical

USA . 5,872 parts In-Stock

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$0.257

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$0.257

Distributors (In-Stock)

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Digiode

USA . 772 parts In-Stock

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$0.217

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R&J Components

USA . 32,046 parts In-Stock

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Chip Stock

USA . 26,000 parts In-Stock

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Vyrian

USA . 6,513 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 693 parts In-Stock

1+ parts

$0.205

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693

$0.205

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Vigor

Singapore . 563 parts In-Stock

1+ parts

$0.220

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563

$0.220

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Corohmni

South Africa . 234 parts In-Stock

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$0.228

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234

$0.228

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AZTECH Wire

Italy . 1,148 parts In-Stock

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$15.360

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$15.360

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Kepictronics

USA . 51,000 parts In-Stock

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RC Electronics

USA . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 5,927 parts In-Stock

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$0.215

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5,927

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$0.215

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SupplyDigital Components

Austria . 5,530 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,414 parts In-Stock

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Kulean Microsystems

USA . 4,045 parts In-Stock

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Problanco Electronics

Mexico . 973 parts In-Stock

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Microchip USA

USA . 477 parts In-Stock

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477

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TANS Electronics

Latvia . 451 parts In-Stock

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UHIMA Technologies

Türkiye . 277 parts In-Stock

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Overview

Unleash the power of precision with the NCS2001SN1T1 operational amplifier by Onsemi. Crafted with excellence, this top-of-the-line component offers unparalleled reliability and performance in a wide range of applications. From industrial automation to medical devices, this amplifier delivers exceptional results with minimal power consumption. Experience seamless integration, superior quality, and unmatched value with the NCS2001SN1T1 - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Nominal Supply Voltage / Vsup (V): 2.5

Suitable for a wide range of applications requiring a 2.5V supply voltage.

Nominal Unity Gain Bandwidth: 1400 kHz

Provides high bandwidth for signal processing and amplification applications.

Architecture: VOLTAGE-FEEDBACK

Provides stable and accurate voltage amplification, making it suitable for precision circuits.

Maximum Seated Height: 1.1 mm

Compact size allows for space-saving integration in electronic designs.

Frequency Compensation: YES

Ensures stability and prevents oscillations in the amplifier circuit.

Technical Specifications

Operational Amplifiers (Op Amps) NCS2001SN1T1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±0.45/±2.5/0.9/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7500 uV

Minimum Slew Rate:

1 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

10 pA

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

3.5 V

Maximum Negative Supply Voltage:

-2.5 V

Minimum Negative Supply Voltage:

-3.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

NCS2001SN1T1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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