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NCP4680DSQ15T1G

Onsemi

NCP4680DSQ15T1G by Onsemi

NCP4680DSQ15T1G by Onsemi is a Fixed Positive Single Output LDO Regulator with 1.5V Nominal Output Voltage, 0.15A Max Output Current, and 1.5% Max Voltage Tolerance. It is ideal for applications requiring low dropout voltage and operates in a temperature range from -40 °C to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 6,889 parts In-Stock

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Flip Electronics

USA . 2,100 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

USA . 1,804 parts In-Stock

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Dan-Mar Components

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Digiode

USA . 1,174 parts In-Stock

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Vigor

Singapore . 676 parts In-Stock

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$0.270

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AZTECH Wire

Italy . 670 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 4,689 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

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Kulean Microsystems

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Corphita

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SupplyDigital Components

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Mexico . 801 parts In-Stock

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Microchip USA

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Corohmni

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India . 88 parts In-Stock

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Overview

Discover the innovative NCP4680DSQ15T1G by Onsemi, a top-quality Fixed Positive Single Output LDO Regulator that promises reliable performance and efficiency. With a focus on precision and durability, Onsemi delivers cutting-edge technology in a compact and versatile package. Perfect for a wide range of applications, this regulator offers stability and consistency, ensuring optimal power distribution. Experience the value and benefits of this product firsthand, and elevate your projects to new heights with Onsemi's NCP4680DSQ15T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ideal for portable electronic devices.

Maximum Dropout Voltage-1: 1.54 V

Low dropout voltage ensures efficient power conversion and minimal power loss.

Surface Mount: YES

Surface mount design enables easy and convenient installation on circuit boards.

Operating Temperature (TJ-Max): 150 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Technology: CMOS

CMOS technology offers high efficiency and low power consumption, making it suitable for battery-powered applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for space-saving and efficient board layout.

Terminal Form: GULL WING

Gull wing terminal form provides strong mechanical connection and heat dissipation.

Operating Temperature (TJ-Min): -40 °C

Wide operating temperature range ensures functionality in extreme cold conditions.

Minimum Output Voltage-1: 1.4775 V

Low minimum output voltage allows for precise regulation and control of output voltage.

Maximum Voltage Tolerance: 1.5 %

Tight voltage tolerance ensures consistent and accurate output voltage regulation.

Nominal Output Voltage-1: 1.5 V

Stable nominal output voltage ensures reliable operation of connected devices.

No. of Terminals: 5

Sufficient number of terminals for connection and integration with other electronic components.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact package style with thin profile and shrink pitch saves space and enhances board density.

Terminal Pitch: 0.65 mm

Close terminal pitch allows for high-density mounting and efficient use of board space.

Regulator Type: FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR

Fixed positive single output LDO regulator provides stable and precise voltage regulation for various applications.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and reliable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for flexible board layout and ease of connection.

Maximum Output Voltage-1: 2.515 V

High maximum output voltage accommodates a wide range of load requirements.

Maximum Seated Height: 1.1 mm

Low seated height enables compact and slim device designs.

Width: 1.25 mm

Narrow width facilitates efficient board space utilization and layout flexibility.

Minimum Input Voltage: 1.4 V

Low minimum input voltage requirement allows for operation with low power sources.

Maximum Output Current-1: 0.15 A

High maximum output current capability supports a variety of load requirements.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for reliable soldering and reflow processes within specified time limits.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures reliable soldering and assembly.

Nominal Dropout Voltage-1: 0.39 V

Low dropout voltage improves efficiency and power conversion performance.

Length: 2 mm

Compact length facilitates space-saving board layout and design.

Maximum Input Voltage: 5.25 V

Wide maximum input voltage range allows compatibility with various power sources.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP4680DSQ15T1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Maximum Dropout Voltage-1:

.54 V

Nominal Dropout Voltage-1:

.39 V

Maximum Input Voltage:

5.25 V

Minimum Input Voltage:

1.4 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

150 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

.15 A

Maximum Output Voltage-1:

2.515 V

Minimum Output Voltage-1:

1.4775 V

Nominal Output Voltage-1:

1.5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1.1 mm

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

Width:

1.25 mm

Trade Compliance

NCP4680DSQ15T1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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