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NCP4620DSN33T1G

Onsemi

NCP4620DSN33T1G by Onsemi

NCP4620DSN33T1G by Onsemi is a CMOS technology LDO regulator with 3.3V output voltage, 0.15A max output current, and 2.6% voltage tolerance. Ideal for applications requiring low dropout voltage and compact design in electronics with input voltages ranging from 3.8V to 10V.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Flip Electronics

USA . 2,300 parts In-Stock

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AZTECH Wire

Italy . 520 parts In-Stock

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Perfect Parts

USA . 12,548 parts In-Stock

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TANS Electronics

Latvia . 6,847 parts In-Stock

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SupplyDigital Components

Austria . 5,559 parts In-Stock

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Kulean Microsystems

USA . 2,556 parts In-Stock

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Problanco Electronics

Mexico . 2,487 parts In-Stock

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GreenTree Electronics

Israel . 2,214 parts In-Stock

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Corphita

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Vigor

Singapore . 773 parts In-Stock

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UHIMA Technologies

Türkiye . 290 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic designs with the NCP4620DSN33T1G by Onsemi, a top-tier manufacturer known for its high-quality components. This fixed regulator offers stable and reliable performance, making it perfect for a wide range of applications. From consumer electronics to industrial equipment, this LDO regulator provides precise voltage regulation with minimal dropout voltage. Trust Onsemi to deliver cutting-edge technology that ensures your projects operate at optimal efficiency. Elevate your designs with the NCP4620DSN33T1G and experience the value and benefits it brings to your products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the regulator, making it reliable for long-term use.

Maximum Dropout Voltage-1: 1.48 V

Low dropout voltage ensures efficient regulation and minimal power loss, making it suitable for low-power applications.

Surface Mount: YES

Surface mount feature allows for easy and compact PCB design, saving space and simplifying assembly process.

Operating Temperature (TJ-Max): 150 °C

Wide operating temperature range ensures stable performance in various environmental conditions, making it versatile and reliable.

Nominal Output Voltage-1: 3.3 V

Stable output voltage ensures consistent power supply, suitable for sensitive electronic components.

Maximum Output Current-1: 0.15 A

High output current capability allows for powering multiple components or devices, making it versatile for various applications.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP4620DSN33T1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Maximum Dropout Voltage-1:

.48 V

Nominal Dropout Voltage-1:

.3 V

Maximum Input Voltage:

10 V

Minimum Input Voltage:

3.8 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Maximum Load Regulation:

.04 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

150 Cel

Maximum Output Current-1:

.15 A

Maximum Output Voltage-1:

3.3759 V

Minimum Output Voltage-1:

3.2142 V

Nominal Output Voltage-1:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification Status:

Not Qualified

Maximum Seated Height:

1.45 mm

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

Width:

1.65 mm

Trade Compliance

NCP4620DSN33T1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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