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NCP4586DSN50T1G

Onsemi

NCP4586DSN50T1G by Onsemi

NCP4586DSN50T1G by Onsemi is a CMOS LDO regulator with 5V output, 1.5% voltage tolerance, and 0.37V dropout voltage. Ideal for applications requiring stable low-profile power supply solutions in compact electronic devices.

Median Price

$0.291

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 646 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.241

10k+ parts

$0.215

646

-

$0.291

$0.241

$0.215

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,203 parts In-Stock

1+ parts

$0.226

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-

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1,203

$0.226

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Vyrian

USA . 6,817 parts In-Stock

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6,817

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Distributors (Availability)

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Corphita

USA . 1,720 parts In-Stock

1+ parts

$0.214

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-

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1,720

$0.214

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Corohmni

South Africa . 302 parts In-Stock

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$0.238

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302

$0.238

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AZTECH Wire

Italy . 1,085 parts In-Stock

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$21.830

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$21.830

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Kepictronics

USA . 306,000 parts In-Stock

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Problanco Electronics

Mexico . 7,252 parts In-Stock

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SupplyDigital Components

Austria . 7,113 parts In-Stock

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TANS Electronics

Latvia . 6,077 parts In-Stock

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Kulean Microsystems

USA . 5,665 parts In-Stock

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Microchip USA

USA . 2,186 parts In-Stock

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Perfect Parts

USA . 2,184 parts In-Stock

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Vigor

Singapore . 988 parts In-Stock

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Continental Prestige Electronics

USA . 646 parts In-Stock

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$0.202

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646

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$0.202

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UHIMA Technologies

Türkiye . 19 parts In-Stock

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Overview

Discover the NCP4586DSN50T1G by Onsemi, a top-quality Fixed Regulator that promises reliable performance and efficiency. Manufactured by Onsemi, a trusted industry leader, this regulator is perfect for a variety of applications. With a precise output voltage of 5V and low dropout voltage, this regulator ensures stable power supply. Enjoy the benefits of compact design and high voltage tolerance. Upgrade your projects with the NCP4586DSN50T1G by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that ensures the regulator is robust and portable.

Maximum Dropout Voltage: 1.37 V

Low dropout voltage allows the regulator to operate efficiently even when there is a small difference between the input and output voltage.

Surface Mount: YES

Enables easy and efficient integration onto a circuit board, saving space and reducing assembly time.

Operating Temperature (TJ-Max): 150 °C

Wide operating temperature range allows the regulator to function reliably in various environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the regulator energy efficient and reliable.

Package Shape: RECTANGULAR

Compact rectangular shape makes it easy to mount and integrate into circuit designs.

Terminal Form: GULL WING

Gull wing terminals provide a secure and reliable connection, ensuring stable performance of the regulator.

Nominal Output Voltage: 5 V

Stable output voltage at 5V ensures consistent performance of connected devices.

Terminal Pitch: 0.95 mm

Close terminal pitch allows for high-density mounting, saving space on the circuit board.

Regulator Type: FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR

Fixed positive output regulator provides a stable voltage supply, essential for sensitive electronic components.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP4586DSN50T1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Maximum Dropout Voltage-1:

.37 V

Maximum Input Voltage:

6.5 V

Minimum Input Voltage:

1.7 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Maximum Load Regulation:

.003 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

150 Cel

Maximum Output Voltage-1:

5.075 V

Minimum Output Voltage-1:

4.925 V

Nominal Output Voltage-1:

5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.45 mm

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

Width:

1.65 mm

Trade Compliance

NCP4586DSN50T1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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