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NCP4586DSN33T1G

Onsemi

NCP4586DSN33T1G by Onsemi

NCP4586DSN33T1G by Onsemi is a 3.3V fixed positive single output LDO regulator with a max dropout voltage of 0.51V and operating temperature up to 150 °C. It is ideal for applications requiring precise voltage regulation in compact spaces due to its small outline, low profile package style and surface mount capability.

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3

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1k+

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Vyrian

USA . 4,630 parts In-Stock

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Digiode

USA . 2,150 parts In-Stock

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Flip Electronics

USA . 250 parts In-Stock

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250

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Vigor

Singapore . 542 parts In-Stock

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$0.230

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542

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AZTECH Wire

Italy . 929 parts In-Stock

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$16.120

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Component Stockers USA

USA . 301 parts In-Stock

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$99.990

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Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Microchip USA

USA . 4,364 parts In-Stock

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TANS Electronics

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 686 parts In-Stock

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UHIMA Technologies

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GreenTree Electronics

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Overview

Unlock the power of reliable and efficient voltage regulation with the NCP4586DSN33T1G by Onsemi. Crafted with precision and expertise, this fixed positive single output LDO regulator offers unparalleled quality and performance. Perfect for a wide range of applications, this product ensures stable voltage output with minimal dropout voltage, making it ideal for demanding electronic systems. Trust Onsemi to deliver superior products that provide value, benefits, and advantages to customers seeking top-notch regulators for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the internal components of the regulator.

Maximum Dropout Voltage: 1.51 V

Low dropout voltage ensures efficient regulation and minimal power loss.

Surface Mount: YES

Allows for easy and convenient integration onto circuit boards.

Operating Temperature (TJ-Max): 150 °C

Can effectively operate in high temperature environments without issues.

Technology: CMOS

CMOS technology offers low power consumption and high efficiency.

Minimum Output Voltage: 3.2505 V

Provides stable output voltage for various applications.

Maximum Voltage Tolerance: 1.5 %

Ensures precise and accurate output voltage regulation.

Nominal Output Voltage: 3.3 V

Standard output voltage suitable for a wide range of electronic devices.

No. of Terminals: 5

Provides necessary connection points for easy installation and usage.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Compact and space-saving design for efficient PCB layout.

Terminal Pitch: 0.95 mm

Allows for precise soldering and connection with other components.

Regulator Type: FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR

Specifically designed for stable and reliable voltage regulation.

Terminal Finish: Tin (Sn)

Provides good conductivity and corrosion resistance for long-term use.

Terminal Position: DUAL

Allows for flexibility in circuit board layout and connection options.

Maximum Output Voltage: 3.3495 V

Maintains output voltage within acceptable limits for optimal performance.

Maximum Seated Height: 1.45 mm

Low profile design for compact and space-constrained applications.

Width: 1.65 mm

Compact size ideal for small electronic devices and projects.

Maximum Load Regulation: 0.003 %

Provides tight control over output voltage under varying load conditions.

Minimum Input Voltage: 1.7 V

Can operate effectively with relatively low input voltages.

Length: 2.9 mm

Compact form factor suitable for small-scale applications.

Maximum Input Voltage: 6.5 V

Accepts a wide range of input voltages for versatile compatibility.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP4586DSN33T1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Maximum Dropout Voltage-1:

.51 V

Maximum Input Voltage:

6.5 V

Minimum Input Voltage:

1.7 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Maximum Load Regulation:

.003 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

150 Cel

Maximum Output Voltage-1:

3.3495 V

Minimum Output Voltage-1:

3.2505 V

Nominal Output Voltage-1:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.45 mm

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

Width:

1.65 mm

Trade Compliance

NCP4586DSN33T1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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