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NC7SZ04FHX-L22175

Onsemi

NC7SZ04FHX-L22175 by Onsemi

The Onsemi NC7SZ04FHX-L22175 is a CMOS Logic Gate with 5.2ns Propagation Delay, suitable for industrial applications. It operates at 1.8V nominal voltage and can handle load capacitance of 50pF. With a small outline package style, it is ideal for surface mount designs requiring fast signal processing.

Median Price

$0.104

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

$0.108

1k+ parts

$0.090

10k+ parts

$0.080

15,000

-

$0.108

$0.090

$0.080

Verical

USA . 15,000 parts In-Stock

1+ parts

-

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$0.100

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$0.100

EBV Elektronik

Germany . 5,000 parts In-Stock

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5,000

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Nova Conductors

Japan . 98 parts In-Stock

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$0.121

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Flip Electronics

USA . 15,000 parts In-Stock

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Vyrian

USA . 8,963 parts In-Stock

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Digiode

USA . 2,007 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 159 parts In-Stock

1+ parts

$0.116

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159

$0.116

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Argo Parts USA

USA . 4,289 parts In-Stock

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$0.121

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$0.117

4,289

$0.121

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$0.117

Continental Prestige Electronics

USA . 772 parts In-Stock

1+ parts

$0.121

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$0.119

772

$0.121

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$0.119

Ampacity Inc.

Singapore . 4,745 parts In-Stock

1+ parts

$12.000

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$12.000

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AZTECH Wire

Italy . 878 parts In-Stock

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$15.130

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QUARKTWIN TECHNOLOGY LTD

USA . 22,525 parts In-Stock

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iodParts Technologies Inc.

India . 20,000 parts In-Stock

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Kulean Microsystems

USA . 6,953 parts In-Stock

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Microchip USA

USA . 6,851 parts In-Stock

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Eastek

USA . 5,000 parts In-Stock

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TANS Electronics

Latvia . 3,914 parts In-Stock

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SupplyDigital Components

Austria . 2,599 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.119

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$0.115

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$0.113

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$0.119

$0.115

$0.113

Problanco Electronics

Mexico . 1,534 parts In-Stock

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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Corphita

USA . 926 parts In-Stock

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Overview

Experience the cutting-edge technology of Onsemi with the NC7SZ04FHX-L22175 logic gate. This high-quality product offers fast propagation delay, low power consumption, and a wide operating temperature range, making it ideal for a variety of industrial applications. Trust in the reliability and performance of Onsemi as you integrate this logic gate into your designs, providing value and efficiency to your projects. Discover the benefits of precision engineering and advanced technology with the NC7SZ04FHX-L22175 today.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 5.2 ns

Low propagation delay ensures fast operation and efficient performance.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage makes the product energy-efficient.

Load Capacitance (CL): 50 pF

Compatible with a variety of circuits and devices.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, suitable for industrial use.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates NC7SZ04FHX-L22175 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.2 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NC7SZ04FHX-L22175 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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