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NC7ST00M5X-L22090

Onsemi

NC7ST00M5X-L22090 by Onsemi

The Onsemi NC7ST00M5X-L22090 is a CMOS Logic Gate with 2 inputs, 17ns propagation delay at 5V. It has a small outline package suitable for surface mount applications. With a wide operating temperature range (-40 to 85 °C), it's ideal for various electronic circuits requiring fast signal processing.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 10,060 parts In-Stock

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Digiode

USA . 304 parts In-Stock

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Microchip USA

USA . 4,328 parts In-Stock

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$0.655

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$0.655

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AZTECH Wire

Italy . 855 parts In-Stock

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$8.820

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QUARKTWIN TECHNOLOGY LTD

USA . 16,739 parts In-Stock

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Kulean Microsystems

USA . 7,965 parts In-Stock

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Problanco Electronics

Mexico . 4,031 parts In-Stock

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SupplyDigital Components

Austria . 3,716 parts In-Stock

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TANS Electronics

Latvia . 2,175 parts In-Stock

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UHIMA Technologies

Türkiye . 989 parts In-Stock

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Corphita

USA . 800 parts In-Stock

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Corohmni

South Africa . 405 parts In-Stock

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Overview

Discover the power of seamless integration with the Onsemi NC7ST00M5X-L22090 Logic Gates. Crafted with precision and expertise, this product offers reliability and efficiency like no other. Perfect for a wide range of applications, this logic gate is designed to enhance performance and streamline operations. Experience unparalleled value and benefits with this innovative solution from Onsemi, setting new standards in quality and functionality. Elevate your projects with the NC7ST00M5X-L22090 and unlock endless possibilities today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the logic gates, making them suitable for various applications.

Propagation Delay At Nominal Supply: 17 ns

Low propagation delay ensures fast operation and efficient performance of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, compatible with many electronic systems and designs.

No. of Inputs: 2

Dual input logic gates allow for versatile logic operations and can be used in a variety of circuit configurations.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making the logic gates energy-efficient and reliable.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes the logic gates suitable for both commercial and industrial applications.

Minimum Operating Temperature: -40 °C

Can operate in extreme low temperatures, ensuring reliable performance in various environmental conditions.

Technical Specifications

Logic Gates NC7ST00M5X-L22090 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HST/T

JESD-30 Code:

R-PDSO-G5

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2 Amp

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Maximum Power Supply Current (ICC):

25 mA

Propagation Delay At Nominal Supply:

17 ns

Propagation Delay (tpd):

31 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.6 mm

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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