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NBXSBA023LN1TAG

Onsemi

NBXSBA023LN1TAG by Onsemi

NBXSBA023LN1TAG clock generator by Onsemi operates at a max frequency of 400 MHz with a supply voltage range of 2.97V to 3.63V. This small outline package is ideal for industrial applications requiring precise timing control, featuring a ceramic and metal-sealed co-fired body suitable for surface mount assembly. With dual terminals and CMOS technology, it offers reliable performance in temperature ranges from -40 °C to 85°C.

Median Price

$20.100

Lifecycle Status

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3

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1k+

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Chip1Stop

Japan . 29 parts In-Stock

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Digiode

USA . 270 parts In-Stock

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$19.095

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Vyrian

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AZTECH Wire

Italy . 207 parts In-Stock

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Corphita

USA . 464 parts In-Stock

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Corohmni

South Africa . 202 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$51.809

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$47.146

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$42.483

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QUARKTWIN TECHNOLOGY LTD

USA . 11,630 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 5,666 parts In-Stock

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Perfect Parts

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SupplyDigital Components

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Problanco Electronics

Mexico . 1,426 parts In-Stock

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UHIMA Technologies

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Microchip USA

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GreenTree Electronics

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Overview

Discover the precision and reliability of the NBXSBA023LN1TAG clock generator by Onsemi. Crafted with top-notch ceramic and metal-sealed cofired materials, this small outline package boasts a maximum output clock frequency of 400 MHz, making it ideal for a wide range of industrial applications. With a nominal supply voltage of 3.3 V and a temperature grade of industrial, this clock generator offers unmatched performance and efficiency. Elevate your projects with the superior quality and advanced technology of Onsemi's NBXSBA023LN1TAG.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and stability to the clock generator, ensuring reliable performance over time.

Maximum Supply Voltage: 3.63 V

The high maximum supply voltage allows for flexibility in powering the clock generator, making it compatible with various systems.

Maximum Output Clock Frequency: 400 MHz

The high maximum output clock frequency enables this clock generator to support fast data processing and high-performance applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this clock generator can function effectively in a wide range of environmental conditions.

Technology: CMOS

The CMOS technology used in this clock generator ensures low power consumption and reliable performance, making it an efficient choice for various electronic devices.

Technical Specifications

Clock Generators NBXSBA023LN1TAG attributes and parameters. Explore more Clock Generators devices from Onsemi

Specs

JESD-30 Code:

R-CDSO-N6

Length:

7 mm

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

400 MHz

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

SON

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.9 mm

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Peripheral IC Type:

Trade Compliance

NBXSBA023LN1TAG Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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