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NBXSBA023LNHTAG

Onsemi

NBXSBA023LNHTAG by Onsemi

NBXSBA023LNHTAG clock generator by Onsemi operates at a max output frequency of 400 MHz with a supply voltage range of 2.97V to 3.63V. This small outline package is ideal for industrial applications requiring precise timing control in temperature ranges from -40 °C to 85°C. With surface mount capability and CMOS technology, it offers reliable performance in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,291 parts In-Stock

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Digiode

USA . 260 parts In-Stock

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260

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AZTECH Wire

Italy . 1,204 parts In-Stock

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$15.500

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SupplyDigital Components

Austria . 5,415 parts In-Stock

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Kulean Microsystems

USA . 4,889 parts In-Stock

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Problanco Electronics

Mexico . 4,525 parts In-Stock

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TANS Electronics

Latvia . 2,726 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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UHIMA Technologies

Türkiye . 257 parts In-Stock

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Corphita

USA . 215 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 104 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the NBXSBA023LNHTAG by Onsemi. As a leading manufacturer in clock generators, Onsemi ensures top-notch quality and innovation in every product they create. This state-of-the-art clock generator is perfect for a variety of applications, offering customers exceptional value and benefits. Whether you're looking for precision timing in industrial settings or high-speed data processing in consumer electronics, this clock generator delivers superior performance and efficiency. Trust Onsemi to provide you with cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures durability and reliability in various operating conditions.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 3.63 V

Can accept a relatively high supply voltage, providing flexibility in power source selection.

Maximum Output Clock Frequency: 400 MHz

Capable of generating high-frequency clock signals, suitable for demanding applications that require fast data processing.

Minimum Operating Temperature: -40 °C

Operational at extremely low temperatures, making it suitable for use in a wide range of environments.

Maximum Seated Height: 1.9 mm

Low profile design allows for compact layouts and efficient use of space in electronic devices.

Temperature Grade: INDUSTRIAL

Designed to meet industrial temperature requirements, ensuring reliable performance in harsh conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, ideal for battery-powered devices and noise-sensitive applications.

Technical Specifications

Clock Generators NBXSBA023LNHTAG attributes and parameters. Explore more Clock Generators devices from Onsemi

Specs

JESD-30 Code:

R-CDSO-N6

Length:

7 mm

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

400 MHz

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

SON

Package Equivalence Code:

DILCC6,.2

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.9 mm

Sub-Category:

Clock Generators

Maximum Supply Current:

100 mA

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Peripheral IC Type:

Trade Compliance

NBXSBA023LNHTAG Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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