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NB4N527SMN

Onsemi

NB4N527SMN by Onsemi

NB4N527SMN by Onsemi is a 16-terminal interface IC with a supply voltage range of 3-3.6V, operating temperature from -40 to 85 °C, and max seated height of 1mm. It is designed for industrial applications requiring fast signal processing with a max receive delay of 0.47ns and low supply current consumption of 53mA.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Digiode

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AZTECH Wire

Italy . 102 parts In-Stock

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$21.840

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A-Z Elektronik GmbH

Germany . 7,488 parts In-Stock

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SupplyDigital Components

Austria . 5,256 parts In-Stock

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Kulean Microsystems

USA . 5,246 parts In-Stock

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TANS Electronics

Latvia . 3,058 parts In-Stock

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Problanco Electronics

Mexico . 1,948 parts In-Stock

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Corphita

USA . 1,410 parts In-Stock

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Corohmni

South Africa . 489 parts In-Stock

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UHIMA Technologies

Türkiye . 440 parts In-Stock

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Microchip USA

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Overview

Discover the cutting-edge NB4N527SMN interface IC by Onsemi and elevate your projects to new heights with its superior quality and reliability. Designed for a wide range of applications, this chip carrier package offers unmatched performance and precision with a very thin profile. With a maximum supply voltage of 3.6V and industrial temperature grade, this product ensures optimal functionality in any environment. Experience seamless integration and enhanced efficiency with the NB4N527SMN, setting a new standard in interface circuit technology. Elevate your designs today with Onsemi's innovative solutions.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and ensuring stable connection.

Maximum Supply Voltage: 3.6 V

Can handle higher voltage inputs, providing flexibility in different applications.

Package Shape: SQUARE

Square package shape allows for efficient use of space on a PCB.

Power Supplies (V): 3.3

Stable power supply voltage ensures reliable performance of the interface IC.

No. of Terminals: 16

Sufficient number of terminals for connection to other components in a circuit.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Variety of package styles for different mounting and heat dissipation requirements.

Minimum Supply Voltage: 3 V

Can operate efficiently even with lower supply voltages, suitable for battery-powered devices.

Maximum Operating Temperature: 85 °C

Can endure high temperature environments without affecting performance.

Minimum Operating Temperature: -40 °C

Operational in extremely cold temperatures, suitable for diverse environments.

Terminal Finish: Tin/Lead (Sn90Pb10)

Provides reliable and durable terminal finish for long-term use.

Terminal Position: QUAD

Quad terminal position allows for secure connection and easy identification of terminals.

Maximum Seated Height: 1 mm

Low profile design enables compact assembly in tight spaces.

Width: 3 mm

Small width makes it suitable for applications with limited space.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering process without damage for efficient manufacturing.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability for reliable soldering and assembly.

Length: 3 mm

Compact length suits applications that require smaller components.

Temperature Grade: INDUSTRIAL

Designed for industrial environments with varying temperature conditions.

Maximum Receive Delay: 0.47 ns

Minimal receive delay ensures fast and efficient data transmission.

Terminal Form: NO LEAD

Lead-free terminal form for environmentally friendly and RoHS compliant design.

Maximum Supply Current: 53 mA

Low supply current demand for energy-efficient operation.

Nominal Supply Voltage: 3.3 V

Stable nominal supply voltage for consistent performance.

Terminal Pitch: 0.5 mm

Fine terminal pitch for high-density mounting and connection in compact designs.

Interface IC Type: INTERFACE CIRCUIT

Specifically designed as an interface circuit for seamless communication between different components.

Technical Specifications

Other Function Interface ICs NB4N527SMN attributes and parameters. Explore more Other Function Interface ICs devices from Onsemi

Specs

Interface IC Type:

JESD-30 Code:

S-XQCC-N16

JESD-609 Code:

e0

Length:

3 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

235

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Receive Delay:

.47 ns

Maximum Seated Height:

1 mm

Sub-Category:

Line Driver or Receivers

Maximum Supply Current:

53 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn90Pb10)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

NB4N527SMN Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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