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NB2309AC1HDT

Onsemi

NB2309AC1HDT by Onsemi

NB2309AC1HDT clock driver by Onsemi operates at 3.3V, with 8 true outputs and a max fmax of 133.33MHz. It is ideal for applications requiring precise timing signals in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,199 parts In-Stock

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3,199

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Digiode

USA . 1,196 parts In-Stock

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1,196

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Distributors (Availability)

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AZTECH Wire

Italy . 37 parts In-Stock

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$14.180

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37

$14.180

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Ampacity Inc.

Singapore . 1,118 parts In-Stock

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$33.000

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$33.000

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SupplyDigital Components

Austria . 8,376 parts In-Stock

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TANS Electronics

Latvia . 7,960 parts In-Stock

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7,960

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Kulean Microsystems

USA . 5,515 parts In-Stock

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5,515

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Problanco Electronics

Mexico . 2,126 parts In-Stock

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Corphita

USA . 959 parts In-Stock

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959

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UHIMA Technologies

Türkiye . 756 parts In-Stock

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756

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Corohmni

South Africa . 361 parts In-Stock

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361

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Microchip USA

USA . 163 parts In-Stock

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Overview

Unlock the power of precision and reliability with the NB2309AC1HDT by Onsemi. Designed to meet the highest standards of quality, this clock driver & buffer offers unparalleled performance in various applications. With a focus on innovation and excellence, Onsemi ensures that each product is crafted with utmost care and attention to detail. Experience seamless operation, efficiency, and consistency with the NB2309AC1HDT, providing you with a competitive edge in your projects. Elevate your designs with this versatile solution, and see the difference that Onsemi can make for your business.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan of the product.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving space and simplifying manufacturing processes.

Input Conditioning: STANDARD

Ensures compatibility with a wide range of input signals, making it versatile for various applications.

Nominal Supply Voltage: 3.3V

Operates at a common and efficient voltage level, suitable for many electronic devices.

Output Characteristics: 3-STATE

Allows the outputs to be in three states (high, low, and high-impedance), providing flexibility in signal routing and control.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, making the product energy-efficient and reliable.

Minimum fmax: 133.33 MHz

Offers high-frequency capability, making it suitable for fast data processing and communication applications.

Technical Specifications

Clock Drivers & Buffers NB2309AC1HDT attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Family:

2309

Input Conditioning:

STANDARD

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Logic IC Type:

Maximum I (ol):

12 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

16

No. of True Outputs:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.25 ns

Maximum Seated Height:

1.2 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Minimum fmax:

133.33 MHz

Trade Compliance

NB2309AC1HDT Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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