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MUR3040PTG

Onsemi

MUR3040PTG by Onsemi

MUR3040PTG by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.06 us. Ideal for power applications, it has a max output current of 15A and a max repetitive peak reverse voltage of 400V. With a package style of flange mount and terminal finish in Tin (Sn), this rectifier diode operates b/w -65 to 175°C.

Median Price

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Lifecycle Status

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Vyrian

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Nova Conductors

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ComSIT Distribution GmbH

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Ampacity Inc.

Singapore . 599 parts In-Stock

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AZTECH Wire

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RC Electronics

USA . 34,270 parts In-Stock

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Problanco Electronics

Mexico . 8,222 parts In-Stock

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Overview

Experience the superior quality and reliability of the MUR3040PTG diode rectifier by Onsemi. With a common cathode configuration, this product offers fast reverse recovery time and a high forward voltage capability, making it ideal for power applications. Onsemi's dedication to excellence ensures that you receive a product that meets the highest standards, providing you with the value and performance you need for your projects. Trust in Onsemi for all your diode and rectifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, making them suitable for various applications.

Maximum Reverse Recovery Time: 0.06 us

The low reverse recovery time ensures fast and efficient switching performance, making the diodes ideal for high-frequency applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows the diodes to withstand elevated temperatures, ensuring reliable performance in harsh conditions.

Maximum Output Current: 15 A

With a high maximum output current, these diodes can handle heavy loads, making them suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high maximum repetitive peak reverse voltage provides excellent surge protection, making the diodes ideal for power applications.

Technical Specifications

Diodes & Rectifiers MUR3040PTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JEDEC-95 Code:

TO-218AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

MUR3040PTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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