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MUR3040PT

Onsemi

MUR3040PT by Onsemi

MUR3040PT by Onsemi is a common cathode rectifier diode with 2 elements. It has a max output current of 15A and a max repetitive peak reverse voltage of 400V. This diode is ideal for power applications due to its fast 0.06us reverse recovery time and high operating temperature of 175°C.

Median Price

$3.576

Lifecycle Status

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Component Electronics Inc.

Canada . 89 parts In-Stock

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PC Components Company LLC

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Corohmni

South Africa . 311 parts In-Stock

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AZTECH Wire

Italy . 801 parts In-Stock

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Component Stockers USA

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Overview

Unleash the power of innovation with the MUR3040PT by Onsemi. Crafted with precision and expertise, this diode & rectifier offers unmatched quality and reliability. Ideal for power applications, this product boasts a common cathode configuration, ensuring optimal performance. With a maximum repetitive peak reverse voltage of 400V and a maximum output current of 15A, the MUR3040PT delivers exceptional value and benefits to customers seeking top-notch components for their projects. Elevate your designs with this high-performance diode & rectifier from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.06 us

Allows for fast switching and efficient performance.

Application: POWER

Suitable for power applications, making it versatile and useful in various electronic systems.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it reliable in different operating conditions.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring efficient AC to DC conversion.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop, leading to energy efficiency and reduced power loss.

Maximum Output Current: 15 A

Capable of handling high current loads, suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 400 V

Can handle high reverse voltages, suitable for various electronic circuits.

Technical Specifications

Diodes & Rectifiers MUR3040PT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JEDEC-95 Code:

TO-218AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MUR3040PT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-429-9769, 5961014299769

NIIN

014299769

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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