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MUR3020WTG

Onsemi

MUR3020WTG by Onsemi

MUR3020WTG by Onsemi is a common cathode diode with ultra-fast recovery power for applications requiring high efficiency. It features a max reverse recovery time of 0.035 us, max forward voltage of 0.85 V, and max output current of 15 A. Ideal for use in environments ranging from -65°C to 175°C due to its silicon diode element material and flange mount package style.

Median Price

$1.767

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Rochester

USA . 30 parts In-Stock

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$1.560

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$1.460

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$1.320

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$1.320

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$1.560

$1.460

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$1.320

Future Electronics

Canada . 1,671 parts In-Stock

1+ parts

$1.940

100+ parts

$1.890

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$1.800

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$1.700

1,671

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$1.700

Verical

USA . 85 parts In-Stock

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$3.218

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EBV Elektronik

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Arrow

USA . 120 parts In-Stock

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$1.594

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$1.545

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Flip Electronics (Authorized)

USA . 120 parts In-Stock

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Digiode

USA . 1,916 parts In-Stock

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$1.482

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

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Bristol Electronics

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ComSIT Distribution GmbH

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Cyclops Electronics Ltd

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EMSNET

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Holdelec - ElecDif-Pro

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ACDS - Activité Composants Distribution Service

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LWI Electronics Inc

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$0.075

100+ parts

$0.071

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$0.071

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20

$0.075

$0.071

$0.071

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Aztec Data Supply Inc.

USA . 73 parts In-Stock

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$0.114

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$0.114

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Semicontronic

India . 104 parts In-Stock

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$1.330

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$1.297

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$1.290

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$1.330

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$1.290

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Ampacity Inc.

Singapore . 80 parts In-Stock

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$1.330

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$1.330

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Corphita

USA . 464 parts In-Stock

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$1.404

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Corohmni

South Africa . 496 parts In-Stock

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Benley Electronics

USA . 90 parts In-Stock

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Continental Prestige Electronics

USA . 6,708 parts In-Stock

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$2.159

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$2.116

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Argo Parts USA

USA . 1,962 parts In-Stock

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$2.159

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AZTECH Wire

Italy . 1,214 parts In-Stock

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Perfect Parts

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Metaverse IC Inc.

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RC Electronics

USA . 43,421 parts In-Stock

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$1.960

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$1.790

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$1.740

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$1.740

Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Kulean Microsystems

USA . 7,944 parts In-Stock

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Problanco Electronics

Mexico . 4,831 parts In-Stock

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SupplyDigital Components

Austria . 4,797 parts In-Stock

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Infinite Electronics LLP (Excess)

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TANS Electronics

Latvia . 1,299 parts In-Stock

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UHIMA Technologies

Türkiye . 789 parts In-Stock

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ChipTracer

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GreenTree Electronics

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iodParts Technologies Inc.

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Overview

Experience the next level of power with the MUR3020WTG by Onsemi. As a leader in the field of diodes and rectifiers, Onsemi delivers unmatched quality and reliability in every product. The MUR3020WTG is designed for ultra-fast recovery power applications, offering customers seamless performance and efficiency. With a maximum output current of 15A and a maximum repetitive peak reverse voltage of 200V, this rectifier diode ensures optimal functionality in any project. Trust Onsemi for superior solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures the diode is durable and can withstand harsh environments, making it a reliable choice for various applications.

Maximum Reverse Recovery Time: 0.035 us

The ultra fast reverse recovery time of 0.035 us ensures efficient and quick operation of the diode, making it suitable for high-speed applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this diode can function effectively in a wide range of temperature conditions, ensuring reliability in varying environments.

Maximum Output Current: 15 A

The high maximum output current of 15 A allows the diode to handle high power loads without overheating, making it suitable for demanding applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high maximum repetitive peak reverse voltage of 200 V ensures the diode can withstand voltage spikes and surges, making it a reliable choice for power protection applications.

Technical Specifications

Diodes & Rectifiers MUR3020WTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MUR3020WTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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