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MUR3020WT

Vishay Intertechnology

MUR3020WT by Vishay Intertechnology

Vishay Intertechnology's MUR3020WT diode features common cathode config, 0.035 us reverse recovery time, and 200V peak reverse voltage. Ideal for ultra-fast recovery high-power applications with max output current of 15A. Package style is flange mount with plastic/epoxy body material.

Median Price

$1.967

Lifecycle Status

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American Microsemiconductor Inc.

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Nova Conductors

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Florida Circuit

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Holdelec - ElecDif-Pro

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Speed Components Ltd

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Corohmni

South Africa . 480 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

USA . 1,585 parts In-Stock

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AZTECH Wire

Italy . 736 parts In-Stock

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Component Stockers USA

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West Coast Incorporated

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Authorized Procurement Solutions

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Computer Components Inc. - USA

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Overview

Discover the power of the MUR3020WT by Vishay Intertechnology, a high-quality diode rectifier that offers ultra-fast recovery and high power capabilities. With a common cathode configuration and two elements, this rectangular package is designed for maximum performance in a variety of applications. Whether you're looking to enhance efficiency or improve reliability, this versatile diode delivers exceptional value and benefits. Trust Vishay Intertechnology for cutting-edge solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements enhances efficiency and allows for easy integration into circuits.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast reverse recovery time ensures minimal energy loss and high-speed performance.

Package Shape: RECTANGULAR

Rectangular package shape provides a compact design for space-saving installations.

No. of Terminals: 3

With 3 terminals, the diode offers flexible connection options for different circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting and stable operation in high-power applications.

Application: ULTRA FAST RECOVERY HIGH POWER

Designed for ultra-fast recovery and high-power applications, ensuring reliable performance under demanding conditions.

Maximum Operating Temperature: 175 °C

High maximum operating temperature of 175°C ensures stability and longevity in various operating environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, enhancing user-friendly operation.

Case Connection: CATHODE

Cathode case connection offers efficient conduction and consistent performance.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for precise rectification of current, making it suitable for power conversion applications.

Maximum Forward Voltage (VF): 1.05 V

Low maximum forward voltage of 1.05 V reduces power loss and improves energy efficiency.

Maximum Output Current: 15 A

High maximum output current of 15 A enables the diode to handle large loads with ease.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures secure connections and easy soldering for reliable operation.

No. of Elements: 2

With 2 elements, the diode provides dual functionality and versatility in circuit design.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage of 200 V ensures durability and protection against voltage surges.

Maximum Non Repetitive Peak Forward Current: 200 A

High maximum non-repetitive peak forward current of 200 A allows for handling of sudden surges in current.

Diode Element Material: SILICON

Silicon diode element material ensures stability, reliability, and consistent performance in a wide range of applications.

Technical Specifications

Diodes & Rectifiers MUR3020WT attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY HIGH POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT APPLICABLE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT APPLICABLE

Trade Compliance

MUR3020WT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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