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MR2520LRLG

Onsemi

MR2520LRLG by Onsemi

MR2520LRLG by Onsemi is a single TRANS VOLTAGE SUPPRESSOR DIODE with 2500W power dissipation, 28V breakdown voltage, and 32V max breakdown voltage. It is used for transient suppression in applications requiring high surge protection like automotive electronics and industrial equipment.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,585 parts In-Stock

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7,585

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Digiode

USA . 573 parts In-Stock

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573

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 85 parts In-Stock

1+ parts

$0.093

100+ parts

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85

$0.093

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AZTECH Wire

Italy . 1,104 parts In-Stock

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$16.590

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1,104

$16.590

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Kulean Microsystems

USA . 6,882 parts In-Stock

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6,882

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Problanco Electronics

Mexico . 6,324 parts In-Stock

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6,324

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TANS Electronics

Latvia . 2,199 parts In-Stock

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2,199

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Infinite Electronics LLP (Excess)

. 807 parts In-Stock

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807

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SupplyDigital Components

Austria . 764 parts In-Stock

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764

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Corphita

USA . 478 parts In-Stock

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478

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Corohmni

South Africa . 380 parts In-Stock

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380

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UHIMA Technologies

Türkiye . 372 parts In-Stock

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Overview

Enhance your electronic systems with the MR2520LRLG transient suppression device by Onsemi. Designed to protect against voltage spikes, this high-quality product offers peace of mind and reliability in various applications. With Onsemi's reputation for excellence in manufacturing, you can trust that this device is built to last. Say goodbye to unexpected downtime and costly repairs - invest in the MR2520LRLG for long-lasting protection and superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 2500 W

Can handle high power surges, making it suitable for applications where overvoltage protection is critical.

Nominal Breakdown Voltage: 28 V

Offers reliable protection by limiting the voltage across the device to a safe level.

Package Shape: ROUND

Compact design allows for easy integration into existing circuits or systems.

No. of Terminals: 2

Simplified connection process for quick and easy installation.

Terminal Finish: TIN

Provides a good electrical connection and prevents corrosion, ensuring the device remains effective over time.

Terminal Position: AXIAL

Allows for efficient heat dissipation, enhancing the overall performance of the device.

Minimum Breakdown Voltage: 24 V

Ensures protection at lower voltage levels, safeguarding sensitive electronic components.

Maximum Breakdown Voltage: 32 V

Provides a safety margin above the nominal breakdown voltage to handle unexpected voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Effective in clamping transient voltages and diverting excess current away from sensitive components.

Technical Specifications

Transient Suppression Devices MR2520LRLG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

24 V

Nominal Breakdown Voltage:

28 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

2500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

23 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR2520LRLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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