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MR2520LRL

Onsemi

MR2520LRL by Onsemi

MR2520LRL by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 2500W peak power dissipation, 28V breakdown voltage, and 32V max breakdown voltage. It is used for transient suppression in various applications requiring high-power surge protection.

Median Price

$0.534

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 700 parts In-Stock

1+ parts

-

100+ parts

$0.475

1k+ parts

$0.395

10k+ parts

$0.352

700

-

$0.475

$0.395

$0.352

Verical

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.594

10k+ parts

-

700

-

-

$0.594

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,135 parts In-Stock

1+ parts

$0.370

100+ parts

-

1k+ parts

-

10k+ parts

-

2,135

$0.370

-

-

-

Chip Stock

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,000

-

-

-

-

Vyrian

USA . 13,087 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,087

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 563 parts In-Stock

1+ parts

$0.351

100+ parts

-

1k+ parts

-

10k+ parts

-

563

$0.351

-

-

-

Corohmni

South Africa . 281 parts In-Stock

1+ parts

$0.390

100+ parts

-

1k+ parts

-

10k+ parts

-

281

$0.390

-

-

-

Component Stockers USA

USA . 478 parts In-Stock

1+ parts

$0.400

100+ parts

$0.370

1k+ parts

-

10k+ parts

-

478

$0.400

$0.370

-

-

AZTECH Wire

Italy . 742 parts In-Stock

1+ parts

$13.880

100+ parts

-

1k+ parts

-

10k+ parts

-

742

$13.880

-

-

-

Problanco Electronics

Mexico . 8,276 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,276

-

-

-

-

SupplyDigital Components

Austria . 7,823 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,823

-

-

-

-

Kulean Microsystems

USA . 5,991 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,991

-

-

-

-

TANS Electronics

Latvia . 1,638 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,638

-

-

-

-

UHIMA Technologies

Türkiye . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

200

-

-

-

-

Overview

Unleash the power of protection with the MR2520LRL by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality in transient suppression devices. This product offers unmatched value and benefits, providing customers with reliable protection against voltage spikes. Whether you're safeguarding sensitive electronics or ensuring the longevity of your equipment, the MR2520LRL is the solution you need. Trust in Onsemi for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and resistance to environmental factors, making this product reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 2500 W

With a high power dissipation capability, this product can effectively handle sudden spikes or surges in power, providing protection to connected devices.

Nominal Breakdown Voltage: 28 V

The nominal breakdown voltage of 28 V indicates the level at which the device starts conducting, effectively suppressing transient voltages and protecting downstream components.

Terminal Finish: TIN LEAD

The use of tin lead as the terminal finish ensures good conductivity and solderability, making installation of the device easy and reliable.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, this product is specifically designed for transient voltage suppression applications, ensuring efficient protection against voltage spikes.

Technical Specifications

Transient Suppression Devices MR2520LRL attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

24 V

Nominal Breakdown Voltage:

28 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

2500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

23 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MR2520LRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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