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MR2535LRL

Onsemi

MR2535LRL by Onsemi

MR2535LRL by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 20V repetitive peak reverse voltage. It has a min breakdown voltage of 24V and max of 32V, suitable for transient suppression applications. The device comes in an axial package style with tin lead terminal finish, ideal for protecting sensitive electronics from voltage spikes.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Inventory MP

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Bristol Electronics

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Component Stockers USA

USA . 207 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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UHIMA Technologies

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Overview

Looking for reliable transient suppression devices? Look no further than the MR2535LRL by Onsemi. With a reputation for top-quality products, Onsemi delivers superior performance and durability. Ideal for a variety of applications, this diode offers unmatched protection against voltage spikes. Ensure peace of mind with the MR2535LRL, providing value, benefits, and advantages that go above and beyond customer expectations. Choose Onsemi for trusted solutions that exceed industry standards.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the component, ensuring a longer lifespan and reliable performance.

Configuration: SINGLE

The single configuration makes installation and setup easier, reducing complexity and potential points of failure.

Package Shape: ROUND

The round package shape allows for easy integration into various circuit designs and layouts.

Number of Terminals: 2

Having only 2 terminals simplifies connection and reduces chances of errors during installation.

Package Style (Meter): DISK BUTTON

The disk button style is compact and space-saving, making it ideal for applications with limited space availability.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good conductivity and corrosion resistance, leading to better overall performance.

Terminal Position: AXIAL

The axial terminal position allows for easy insertion and soldering onto circuit boards.

Case Connection: ISOLATED

The isolated case connection helps prevent interference and ensures safe operation within the circuit.

Minimum Breakdown Voltage: 24 V

The minimum breakdown voltage of 24 V provides protection against voltage spikes and surges in the circuit.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this component can withstand high temperatures during soldering processes.

Maximum Breakdown Voltage: 32 V

The maximum breakdown voltage of 32 V offers an additional safety margin for overvoltage protection in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type ensures efficient and effective suppression of voltage transients, protecting sensitive components.

Technology: AVALANCHE

Utilizing avalanche technology allows for quick response and high energy handling capability when dealing with transient voltage spikes.

Terminal Form: WIRE

The wire terminal form provides a secure and reliable connection to the circuit, enhancing overall performance.

Maximum Repetitive Peak Reverse Voltage: 20 V

The maximum repetitive peak reverse voltage of 20 V ensures protection against reverse voltage conditions in the circuit.

Polarity: UNIDIRECTIONAL

Being unidirectional in polarity ensures that voltage surges are only suppressed in one direction, maintaining circuit integrity and efficiency.

Diode Element Material: SILICON

Made from silicon, the diode element material provides high efficiency and reliability in suppressing transient voltage spikes.

Technical Specifications

Transient Suppression Devices MR2535LRL attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

24 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MR2535LRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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