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MR2520LG

Onsemi

MR2520LG by Onsemi

MR2520LG by Onsemi is a single-config transient suppression device with 2500W peak power dissipation and 32V breakdown voltage. It features a unidirectional diode element made of silicon, suitable for applications requiring high surge protection like automotive electronics and industrial equipment.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

USA . 7,051 parts In-Stock

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Digiode

USA . 2,120 parts In-Stock

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AZTECH Wire

Italy . 433 parts In-Stock

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Kulean Microsystems

USA . 7,918 parts In-Stock

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Problanco Electronics

Mexico . 7,168 parts In-Stock

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TANS Electronics

Latvia . 6,045 parts In-Stock

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SupplyDigital Components

Austria . 1,819 parts In-Stock

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Corphita

USA . 1,544 parts In-Stock

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UHIMA Technologies

Türkiye . 543 parts In-Stock

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Corohmni

South Africa . 451 parts In-Stock

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Overview

Enhance your electronic devices with the MR2520LG by Onsemi, a high-quality Transient Suppression Device that offers ultimate protection against voltage spikes. Manufactured by the reputable Onsemi brand, this diode ensures reliability and performance in various applications. With a maximum non-repetitive peak reverse power dissipation of 2500W and nominal breakdown voltage of 32V, this product guarantees superior protection for your valuable equipment. Trust in the MR2520LG to safeguard your devices and enjoy peace of mind knowing they are well-protected.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the device lightweight and durable, ensuring long-lasting performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 2500 W

The high power dissipation capability allows the device to handle high voltage spikes effectively, providing reliable protection for sensitive electronics.

Nominal Breakdown Voltage: 32 V

The nominal breakdown voltage of 32V indicates the voltage at which the device starts conducting, ensuring protection against overvoltage conditions.

Package Shape: ROUND

The round package shape facilitates easy installation and placement in various electronic circuits, making it convenient for integration.

No. of Terminals: 2

Having 2 terminals simplifies the connection process, making it easy to integrate the device into the circuitry.

Package Style (Meter): DISK BUTTON

The disk button style of the package provides a compact form factor, suitable for applications where space is limited.

Terminal Finish: TIN

The tin terminal finish ensures good conductivity and solderability, facilitating a secure connection in the circuit.

Terminal Position: AXIAL

The axial terminal position allows for easy alignment and soldering, ensuring proper installation of the device in the circuit.

Case Connection: ISOLATED

The isolated case connection design helps prevent any unwanted electrical interference or short circuits, enhancing the overall reliability of the device.

Minimum Breakdown Voltage: 24 V

The minimum breakdown voltage of 24V ensures that the device activates at the specified voltage level, offering consistent protection against voltage spikes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of 260 °C enables the device to withstand soldering processes without any damage, ensuring easy assembly on PCBs.

Maximum Breakdown Voltage: 32 V

The maximum breakdown voltage of 32V defines the highest voltage level at which the device can operate safely, providing robust protection.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, this device is specifically designed to clamp transient voltage spikes and protect sensitive components from damage.

Technology: AVALANCHE

Utilizing avalanche technology, this device can handle high surge currents and voltage spikes effectively, safeguarding the connected circuitry from transient events.

Terminal Form: WIRE

The wire terminal form offers flexibility in connecting the device to the circuit, allowing for easy installation and maintenance.

Maximum Repetitive Peak Reverse Voltage: 23 V

With a maximum repetitive peak reverse voltage of 23V, the device can provide continuous protection against reverse voltage conditions, ensuring the reliability of the system.

Polarity: UNIDIRECTIONAL

Having unidirectional polarity means the device conducts current in only one direction, effectively clamping voltage spikes to protect sensitive electronics.

Diode Element Material: SILICON

Utilizing silicon material in the diode element ensures high reliability, excellent performance, and low leakage current, making it an ideal choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices MR2520LG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

24 V

Nominal Breakdown Voltage:

32 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

2500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

23 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR2520LG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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