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MMSZ4V7ET1

Onsemi

MMSZ4V7ET1 by Onsemi

MMSZ4V7ET1 by Onsemi is a Zener diode with 4.7V nominal reference voltage, 5% max voltage tolerance, and 80 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and unidirectional polarity.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,775 parts In-Stock

1+ parts

-

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$0.038

1k+ parts

$0.031

10k+ parts

$0.028

5,775

-

$0.038

$0.031

$0.028

Distributors (In-Stock)

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Digiode

USA . 1,055 parts In-Stock

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$0.029

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$0.029

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Vyrian

USA . 8,568 parts In-Stock

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8,568

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,701 parts In-Stock

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$0.026

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5,701

$0.026

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Corphita

USA . 1,550 parts In-Stock

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$0.028

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1,550

$0.028

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Component Stockers USA

USA . 5,536 parts In-Stock

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$0.030

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$0.030

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$0.030

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-

5,536

$0.030

$0.030

$0.030

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Corohmni

South Africa . 286 parts In-Stock

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$0.031

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286

$0.031

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AZTECH Wire

Italy . 1,071 parts In-Stock

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$21.550

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$21.550

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Kulean Microsystems

USA . 7,205 parts In-Stock

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TANS Electronics

Latvia . 5,002 parts In-Stock

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Problanco Electronics

Mexico . 3,174 parts In-Stock

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UHIMA Technologies

Türkiye . 855 parts In-Stock

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SupplyDigital Components

Austria . 132 parts In-Stock

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Overview

Unlock new possibilities with the MMSZ4V7ET1 Zener Diode by Onsemi. Crafted with precision and quality, this diode offers reliable performance in a wide range of applications. From voltage regulation to surge protection, this small outline diode delivers consistent results with a 5% voltage tolerance and low dynamic impedance. Trust in Onsemi's expertise and elevate your projects with the MMSZ4V7ET1 Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the diode, making it suitable for a wide range of applications.

Working Test Current: 5 mA

The 5 mA working test current ensures efficient and reliable performance of the Zener diode under normal operating conditions.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Maximum Voltage Tolerance: 5 %

The low 5% maximum voltage tolerance ensures accurate and precise voltage regulation, making it ideal for sensitive electronics.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable performance in a variety of environments and conditions.

Maximum Power Dissipation: 0.5 W

The 0.5 W maximum power dissipation rating indicates the diode's ability to handle high power loads without overheating, ensuring long-term reliability.

Diode Type: ZENER DIODE

Being a Zener diode, this product is specifically designed for voltage regulation and protection in electronic circuits, making it a reliable choice.

Nominal Reference Voltage: 4.7 V

The 4.7 V nominal reference voltage offers precise voltage regulation, making it suitable for a wide range of applications requiring stable voltage levels.

Technical Specifications

Zener Diodes MMSZ4V7ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

80 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.7 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

MMSZ4V7ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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