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MMBZ5221BLT3G

Onsemi

MMBZ5221BLT3G by Onsemi

MMBZ5221BLT3G by Onsemi is a Zener diode with 2.4V nominal reference voltage, 5% max voltage tolerance, and 30 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation, such as power supplies and signal conditioning circuits.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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AZTECH Wire

Italy . 1,111 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,225 parts In-Stock

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Problanco Electronics

Mexico . 7,711 parts In-Stock

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SupplyDigital Components

Austria . 7,011 parts In-Stock

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Kulean Microsystems

USA . 3,832 parts In-Stock

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TANS Electronics

Latvia . 2,793 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 728 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the high-quality MMBZ5221BLT3G Zener Diode from Onsemi. Designed for optimal performance and reliability, this single-configured diode is perfect for a wide range of applications. With its small outline package style and maximum voltage tolerance of 5%, this Zener diode offers exceptional value and benefits to customers. Whether you're working on power supplies, voltage regulators, or signal conditioning circuits, the MMBZ5221BLT3G provides precise voltage regulation and protection against voltage spikes. Trust Onsemi's expertise in semiconductor manufacturing to deliver top-of-the-line components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, ideal for applications where weight and durability are important factors.

Working Test Current: 20 mA

The high working test current of 20 mA ensures reliable performance in various circuits and applications.

Surface Mount: YES

Being surface mountable, this diode is easy to install on PCBs, saving space and providing a clean and professional look to the circuit design.

Maximum Voltage Tolerance: 5 %

The low maximum voltage tolerance of 5% ensures accurate and stable voltage regulation, making this diode suitable for precision electronics.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can perform reliably in harsh environmental conditions without overheating.

Maximum Power Dissipation: 0.225 W

The high maximum power dissipation of 0.225 W allows the diode to handle higher power levels, making it suitable for a wide range of applications.

Nominal Reference Voltage: 2.4 V

The nominal reference voltage of 2.4 V ensures precise voltage regulation, making this diode suitable for various voltage control applications.

Technical Specifications

Zener Diodes MMBZ5221BLT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

30 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

2.4 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5221BLT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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