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MMBT100

Onsemi

MMBT100 by Onsemi

Onsemi's MMBT100 is a NPN BJT transistor with max VCEsat of 0.4V, hFE of 300, and fT of 250MHz. Ideal for amplifier applications, it has a max IC of 0.5A and operates b/w -55 to 150°C. Its small outline package makes it suitable for surface mount designs.

Median Price

$0.086

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,190 parts In-Stock

1+ parts

$0.138

100+ parts

$0.052

1k+ parts

$0.048

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$0.046

8,190

$0.138

$0.052

$0.048

$0.046

Newark

USA . 37,962 parts In-Stock

1+ parts

$0.272

100+ parts

$0.112

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$0.077

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37,962

$0.272

$0.112

$0.077

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DigiKey

USA . 218,910 parts In-Stock

1+ parts

$0.280

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$0.105

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$0.068

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218,910

$0.280

$0.105

$0.068

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Mouser Electronics

USA . 21,662 parts In-Stock

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$0.280

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$0.105

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$0.069

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$0.053

21,662

$0.280

$0.105

$0.069

$0.053

Farnell

UK . 39,751 parts In-Stock

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$0.082

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$0.060

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$0.054

39,751

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$0.082

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$0.054

Element14

Singapore . 39,751 parts In-Stock

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$0.089

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$0.088

39,751

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$0.088

Flip Electronics (Authorized)

USA . 28,433 parts In-Stock

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Master Electronics

USA . 24,000 parts In-Stock

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Verical

USA . 24,000 parts In-Stock

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$0.056

24,000

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$0.056

Chip1Stop

Japan . 19 parts In-Stock

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$0.035

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Rochester

USA . 10 parts In-Stock

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$0.041

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$0.034

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$0.031

10

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Distributors (In-Stock)

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Digiode

USA . 1,630 parts In-Stock

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$0.032

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1,630

$0.032

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Nova Conductors

Japan . 34 parts In-Stock

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$0.075

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34

$0.075

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Bristol Electronics

USA . 5,870 parts In-Stock

1+ parts

$0.375

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$0.188

1k+ parts

$0.075

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$0.056

5,870

$0.375

$0.188

$0.075

$0.056

Vyrian

USA . 159,798 parts In-Stock

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IBS Electronics

USA . 51,000 parts In-Stock

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Chip Stock

USA . 47,000 parts In-Stock

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Flip Electronics

USA . 28,433 parts In-Stock

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ComSIT USA

USA . 13,778 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

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$0.095

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$0.095

Lakeview Electronics

USA . 5,850 parts In-Stock

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5,850

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Flex Direct, LLC

USA . 2,879 parts In-Stock

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Classic Components Corporation

USA . 2,793 parts In-Stock

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MISTER SPROCKETS

USA . 2,500 parts In-Stock

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Sensible Micro Corp

USA . 2,389 parts In-Stock

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$0.049

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$0.045

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2,389

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$0.049

$0.045

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Connector Distribution Corp

USA . 900 parts In-Stock

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900

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Right Parts Inc.

USA . 900 parts In-Stock

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900

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Sogenti Electronics

Canada . 623 parts In-Stock

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623

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Semtec, LLC

USA . 500 parts In-Stock

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500

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Anansix

USA . 172 parts In-Stock

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172

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Distributors (Availability)

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Ampacity Inc.

Singapore . 113,565 parts In-Stock

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$0.027

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Corphita

USA . 988 parts In-Stock

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$0.031

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988

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Corohmni

South Africa . 84 parts In-Stock

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$0.032

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84

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Aranea Global

USA . 100 parts In-Stock

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$0.073

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$0.070

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100

$0.073

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$0.070

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Argo Parts USA

USA . 4,112 parts In-Stock

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$0.075

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$0.072

4,112

$0.075

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$0.072

Continental Prestige Electronics

USA . 69,266 parts In-Stock

1+ parts

$0.307

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$0.121

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$0.054

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69,266

$0.307

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Perfect Parts

USA . 516,087 parts In-Stock

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Futuretech Components

Singapore . 350,000 parts In-Stock

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RC Electronics

USA . 110,384 parts In-Stock

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$0.080

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$0.070

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$0.070

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$0.080

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$0.070

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Glotronic Ltd.

UK . 21,600 parts In-Stock

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Eastek

USA . 15,000 parts In-Stock

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GreenTree Electronics

Israel . 15,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,900 parts In-Stock

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Kulean Microsystems

USA . 5,401 parts In-Stock

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Kepictronics

USA . 4,500 parts In-Stock

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Lixinc

USA . 3,948 parts In-Stock

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SupplyDigital Components

Austria . 2,926 parts In-Stock

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Problanco Electronics

Mexico . 1,340 parts In-Stock

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TANS Electronics

Latvia . 573 parts In-Stock

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573

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Supply Digital

USA . 459 parts In-Stock

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459

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Authorized Procurement Solutions

USA . 256 parts In-Stock

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UHIMA Technologies

Türkiye . 138 parts In-Stock

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138

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Overview

Experience superior performance with the MMBT100 from Onsemi. As a leading manufacturer in the industry, Onsemi's Small Signal Bipolar Junction Transistors (BJT) are known for their reliability and durability. The MMBT100, with its NPN polarity and single configuration, is perfect for amplifier applications. Its compact design, high DC current gain, and low VCEsat make it a versatile choice for various electronic projects. Trust Onsemi to deliver quality products that provide value and efficiency, ensuring your projects run smoothly every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design by only requiring one transistor in the amplifier configuration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Allows for easy installation on a circuit board, saving space and simplifying the manufacturing process.

Maximum VCEsat: 0.4 V

Low saturation voltage helps reduce power consumption and heat generation in the circuit.

Package Shape: RECTANGULAR

Standard package shape that is easy to handle and mount on a circuit board.

Terminal Form: GULL WING

Gull wing terminals provide a secure and stable connection to the circuit board.

No. of Terminals: 3

Simple design with three terminals makes it easy to integrate into circuits.

Maximum Power Dissipation (Abs): 0.35 W

Can safely handle power dissipation up to 0.35 W, suitable for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on the circuit board and allows for dense circuit designs.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150°C, suitable for a variety of applications.

Maximum Collector-Base Capacitance: 4.5 pF

Low capacitance minimizes signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 45 V

Can handle high collector-emitter voltages, making it versatile for different circuit requirements.

Transistor Element Material: SILICON

Silicon-based material provides reliable and stable transistor performance.

Minimum Operating Temperature: -55 °C

Can operate in low temperatures down to -55°C, suitable for a wide range of environments.

Maximum Collector Current (IC): 0.5 A

Able to handle collector currents up to 0.5 A, suitable for various amplification applications.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and connection reliability.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit board layout and design.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds during manufacturing processes.

Peak Reflow Temperature °C: 260

Can handle peak reflow temperatures up to 260°C during manufacturing processes.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency ensures fast response and amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

MMBT100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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