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MCR100-6ZL1G

Onsemi

MCR100-6ZL1G by Onsemi

MCR100-6ZL1G by Onsemi is a single SCR with max. on-state current of 0.8A and trigger voltage of 1.2V, ideal for applications requiring up to 400V repetitive peak off-state voltage. Its package is cylindrical in shape with through-hole terminals, suitable for operating temperatures from -40 °C to 110°C.

Median Price

$0.171

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 122 parts In-Stock

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$0.171

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$0.160

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$0.145

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122

$0.171

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$0.145

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Distributors (In-Stock)

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Digiode

USA . 1,254 parts In-Stock

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$0.162

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Sensible Micro Corp

USA . 7,816 parts In-Stock

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Vyrian

USA . 6,899 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 410 parts In-Stock

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410

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EMSNET

USA . 340 parts In-Stock

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340

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Martec Srl

Italy . 307 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,849 parts In-Stock

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$0.154

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Corohmni

South Africa . 62 parts In-Stock

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$0.171

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62

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Advanced Electronics

New Zealand . 73 parts In-Stock

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$2.890

100+ parts

$2.630

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$2.370

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73

$2.890

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$2.370

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AZTECH Wire

Italy . 816 parts In-Stock

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$13.140

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Component Stockers USA

USA . 649 parts In-Stock

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$99.990

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Perfect Parts

USA . 13,346 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,964 parts In-Stock

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Problanco Electronics

Mexico . 7,127 parts In-Stock

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SupplyDigital Components

Austria . 5,956 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 3,716 parts In-Stock

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Assy Fe

Spain . 1,410 parts In-Stock

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UHIMA Technologies

Türkiye . 733 parts In-Stock

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Overview

Unlock the power of reliable performance with the MCR100-6ZL1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Silicon Controlled Rectifiers (SCR) like no other. This versatile component is perfect for a wide range of applications, offering customers exceptional value and benefits. Whether used in industrial machinery or consumer electronics, the MCR100-6ZL1G guarantees efficiency and durability, making it the go-to choice for all your electronic needs. Experience the difference with Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components.

Maximum DC Gate Trigger Current: 0.2 mA

Allows for precise control of the SCR.

Configuration: SINGLE

Simplifies the circuit design and installation.

Non Repetitive Peak On-state Current: 10 A

Capable of handling high current loads.

Package Shape: ROUND

Facilitates easy mounting and installation in circular openings.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections on a PCB.

Maximum On-state Current: 0.8 A

Suitable for moderate power applications.

Maximum Leakage Current: 0.1 mA

Ensures minimal power loss in off-state condition.

Repetitive Peak Reverse Voltage: 400 V

Provides high voltage protection for the device.

No. of Terminals: 3

Simplifies the connection setup.

Package Style (Meter): CYLINDRICAL

Enhances durability and ease of handling.

Maximum Operating Temperature: 110 °C

Can withstand high operating temperatures.

Minimum Operating Temperature: -40 °C

Suitable for a wide range of operating environments.

Terminal Finish: TIN SILVER COPPER

Ensures good conductivity and durability of the terminals.

Terminal Position: BOTTOM

Facilitates easy mounting and soldering on a PCB.

Maximum RMS On-state Current: 0.8 A

Indicates the maximum continuous current the SCR can handle.

Maximum DC Gate Trigger Voltage: 1.2 V

Provides efficient triggering of the SCR.

Repetitive Peak Off-state Voltage: 400 V

Ensures high off-state voltage protection.

Minimum Critical Rate of Rise of Off-state Voltage: 20 V/us

Protects the device from voltage surges.

Maximum Holding Current: 5 mA

Indicates the current required to keep the SCR in the on-state.

Peak Reflow Temperature °C: 260

Suitable for high-temperature soldering processes.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR100-6ZL1G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR100-6ZL1G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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