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MC44603P

Onsemi

MC44603P by Onsemi

MC44603P by Onsemi is a VOLTAGE-MODE SWITCHING CONTROLLER with 16 terminals, operating b/w -25 to 85 °C. It has a max output current of 0.75 A and operates at a frequency of 250 kHz. Ideal for applications requiring efficient power regulation in compact spaces.

Median Price

$0.633

Lifecycle Status

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13

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Vyrian

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Bristol Electronics

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Resion

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ACDS - Activité Composants Distribution Service

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GES GmbH

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Fibra_Brandt Electronic GMBH

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Huijzer Components

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Corel Iberica Componentes, S.L.

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LittleDiode

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Problanco Electronics

Mexico . 8,375 parts In-Stock

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Kulean Microsystems

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Corphita

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UHIMA Technologies

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Corohmni

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Cyclops Electronics Ltd (Excess)

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Overview

Unleash the power of efficient energy management with the MC44603P from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality switching regulators & controllers that provide reliable performance. Ideal for a wide range of applications, this product offers customers unparalleled value and benefits. Experience enhanced energy efficiency and seamless operation with the MC44603P, setting a new standard for power management solutions. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the product lightweight and durable, ideal for portable devices.

No. of Terminals: 16

16 terminals provide versatility in connectivity options, allowing for various configurations.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in a wide range of environments.

Nominal Input Voltage: 12 V

A stable nominal input voltage of 12V ensures consistent power supply to connected devices.

Maximum Switching Frequency: 250 kHz

High maximum switching frequency allows for efficient power conversion with minimal ripple.

Technical Specifications

Switching Regulators & Controllers MC44603P attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Additional Features:

ALSO CONFIGURABLE IN CURRENT MODE

Other IC type:

Control Mode:

VOLTAGE-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

15 V

Minimum Input Voltage:

10 V

Nominal Input Voltage:

12 V

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e0

Length:

19.175 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Maximum Output Current:

.75 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

4.44 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

NO

Switcher Config:

SINGLE

Maximum Switching Frequency:

250 kHz

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

MC44603P Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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