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MC34164D-3G

Onsemi

MC34164D-3G by Onsemi

MC34164D-3G by Onsemi is a Power Management IC with Vsup of 2.4V, Isup of 0.04mA, and V threshold of +2.7V. It is used in power supply support circuits for various applications due to its small outline package and commercial temperature grade suitability.

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,251 parts In-Stock

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Digiode

USA . 209 parts In-Stock

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AZTECH Wire

Italy . 563 parts In-Stock

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$17.390

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Component Stockers USA

USA . 445 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 17,870 parts In-Stock

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Problanco Electronics

Mexico . 8,200 parts In-Stock

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SupplyDigital Components

Austria . 7,079 parts In-Stock

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Microchip USA

USA . 6,824 parts In-Stock

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TANS Electronics

Latvia . 5,665 parts In-Stock

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Kulean Microsystems

USA . 5,192 parts In-Stock

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Corphita

USA . 821 parts In-Stock

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UHIMA Technologies

Türkiye . 563 parts In-Stock

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Metaverse IC Inc.

Canada . 382 parts In-Stock

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Corohmni

South Africa . 74 parts In-Stock

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Overview

Discover the exceptional quality and reliability of the MC34164D-3G by Onsemi, a leading manufacturer in the field of Power Management ICs. This versatile product offers customers a wide range of applications, delivering efficient power supply support with a nominal threshold voltage of +2.7V. With a small outline package style and dual terminal position, this innovative technology provides maximum performance in a compact design. Experience the value and benefits of Onsemi's MC34164D-3G, ensuring optimal power management for your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and provides good protection for the internal components of the IC.

Surface Mount: YES

Surface mount technology makes it easier to assemble the IC onto a PCB, saving space and reducing manufacturing costs.

Nominal Supply Voltage: 2.4 V

Operating at 2.4V is efficient and can help to optimize power consumption.

No. of Terminals: 8

Having 8 terminals allows for versatility in connecting to other components in a circuit.

Maximum Operating Temperature: 70 °C

Being able to operate at up to 70 °C makes this IC suitable for a wide range of environments and applications.

Minimum Operating Temperature: 0 °C

Being able to operate at temperatures as low as 0 °C ensures reliability in different operating conditions.

Terminal Finish: TIN

TIN terminal finish provides good conductivity and ensures reliable connections in the circuit.

Maximum Seated Height: 1.75 mm

Having a low seated height reduces the overall profile of the IC, making it suitable for compact designs.

Nominal Threshold Voltage: +2.7V

The threshold voltage of +2.7V ensures stable operation and accuracy in determining the switching points of the IC.

Maximum Supply Current: 0.04 mA

Operating with a maximum supply current of 0.04 mA indicates low power consumption, which is desirable for power management applications.

Technology: BIPOLAR

Bipolar technology offers good performance and reliability in power management applications.

Technical Specifications

Power Management ICs MC34164D-3G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.04 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

1 V

Nominal Supply Voltage (Vsup):

2.4 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.7V

Width (mm):

3.9 mm

Trade Compliance

MC34164D-3G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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