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MC14052BCPG

Onsemi

MC14052BCPG by Onsemi

MC14052BCPG by Onsemi is a CMOS differential multiplexer with 4 channels. It operates at temperatures from -55 to 125 °C and has a max supply voltage of 18 V. With a nominal off-state isolation of 50 dB, it is ideal for military-grade applications requiring precise signal switching within a compact IN-LINE package.

Median Price

$1.609

Lifecycle Status

Suppliers In-Stock

8

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Nova Conductors

Japan . 10 parts In-Stock

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$0.275

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Component Electronics Inc.

Canada . 45 parts In-Stock

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$1.920

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$1.440

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Vyrian

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Digiode

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Florida Circuit

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Sensible Micro Corp

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Distributors (Availability)

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Continental Prestige Electronics

USA . 835 parts In-Stock

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$0.275

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$0.270

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Argo Parts USA

USA . 25 parts In-Stock

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$0.275

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$0.267

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Corohmni

South Africa . 218 parts In-Stock

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Semicontronic

India . 333 parts In-Stock

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Ampacity Inc.

Singapore . 286 parts In-Stock

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AZTECH Wire

Italy . 844 parts In-Stock

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Aztec Data Supply Inc.

USA . 198 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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TANS Electronics

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Microchip USA

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A-Z Elektronik GmbH

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Authorized Procurement Solutions

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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GreenTree Electronics

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UHIMA Technologies

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Metaverse IC Inc.

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Component Stockers USA

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Overview

Onsemi's MC14052BCPG is a top-quality differential multiplexer that offers unparalleled performance and reliability. With Onsemi's reputation for excellence in the industry, you can trust that this product is built to last. Ideal for a wide range of applications, this multiplexer is versatile and efficient, providing customers with the value they need. Whether you're looking for precision, durability, or ease of use, the MC14052BCPG delivers on all fronts. Upgrade your system today with Onsemi's exceptional multiplexer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection for the internal components of the multiplexer, making it a reliable choice for long-term use.

Nominal Supply Voltage (Vsup): 5 V

Operating at a standard 5V supply voltage makes this multiplexer compatible with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this multiplexer can withstand elevated temperature environments without sacrificing performance.

No. of Channels: 4

Having 4 channels allows for versatile signal routing and switching capabilities, making this multiplexer suitable for various complex circuit designs.

Technology: CMOS

The CMOS technology used in this multiplexer offers low power consumption and high noise immunity, resulting in efficient and reliable operation.

Switching (V): BREAK-BEFORE-MAKE

The break-before-make switching feature ensures smooth and efficient signal switching without the risk of short-circuiting or signal overlap, enhancing the overall performance of the multiplexer.

Technical Specifications

Multiplexers & Switches MC14052BCPG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3

Length:

19.175 mm

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

50 dB

Nominal On-state Resistance Match:

25 ohm

Maximum On-state Resistance (Ron):

1050 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Seated Height:

4.44 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

NO

Maximum Switch-off Time:

600 ns

Maximum Switch-on Time:

600 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

MC14052BCPG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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