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MBRS260T3

Onsemi

MBRS260T3 by Onsemi

MBRS260T3 by Onsemi is a Schottky rectifier diode with max forward voltage of 0.475V and max output current of 2A. It operates in temp range -55 to 150°C, ideal for power applications. The package is small outline, surface mountable, with dual terminals made of tin/lead (Sn/Pb).

Median Price

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Lifecycle Status

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6

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1k+

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Chip Stock

USA . 92,500 parts In-Stock

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Vyrian

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Prism Electronics

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Semicontronic

India . 1,525 parts In-Stock

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Aztec Data Supply Inc.

USA . 437 parts In-Stock

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$0.050

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Ampacity Inc.

Singapore . 411 parts In-Stock

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AZTECH Wire

Italy . 876 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

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Lixinc

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Overview

Unlock the power of innovation with the MBRS260T3 by Onsemi. Crafted with precision and expertise, this diode rectifier offers unparalleled quality and reliability. Ideal for power applications, this product is designed to exceed expectations. With its cutting-edge technology and superior performance, the MBRS260T3 ensures seamless operation and maximum efficiency. Trust Onsemi to deliver excellence in every aspect, providing you with a product that adds tremendous value to your projects. Experience the difference with the MBRS260T3 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Configuration: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular package shape enables space-saving installation in various electronic devices.

Number of Terminals: 2

Having only 2 terminals simplifies the wiring process and reduces chances of errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for compact designs.

Application: POWER

Designed for power applications, ensuring efficient power handling capabilities.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the diode can function in cold environments without issues.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides excellent solderability and reliability in electronic assemblies.

Terminal Position: DUAL

Dual terminal position offers flexibility in connecting the diode in different circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature prevents damage to the diode during the soldering process.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures secure solder joints for reliable performance.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for converting AC to DC efficiently in power supply applications.

Maximum Forward Voltage (VF): 0.475 V

Low forward voltage drop results in minimal power loss and higher efficiency.

Maximum Output Current: 2 A

High output current rating enables the diode to handle substantial power loads without overheating.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage, ideal for high-frequency applications.

Terminal Form: C BEND

C bend terminal form offers secure connection and easy mounting on PCBs.

Maximum Repetitive Peak Reverse Voltage: 60 V

High repetitive peak reverse voltage rating ensures protection against reverse voltage transients.

Maximum Non-Repetitive Peak Forward Current: 60 A

High non-repetitive peak forward current capability allows the diode to handle surge currents without damage.

Diode Element Material: SILICON

Silicon diode element material provides good thermal conductivity and electrical properties for reliable performance.

Technical Specifications

Diodes & Rectifiers MBRS260T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.475 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS260T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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